Abstract:High‐performance n‐type PbSe thermoelectrics is obtained by stepwise strategy. Pb self‐compensation plains the lattice and improves carrier mobility, making the thermoelectric performance enhance near room temperature. Then the introduction of mobile Cu ions inhibits phonon transport and optimizes lattice thermal conductivity, achieving high ZT values at wide‐range temperatures. Eventually, a peak ZT of ≈1.8 at 773 K is realized. The coupling relationship between electrical and thermal transports makes it rather challenging to enhance thermoelectric performance. Here, electrical and thermal transports are successfully decoupled to realize high performance in n‐type PbSe by utilizing a stepwise strategy. First, the PbSe lattice is plained with extra Pb to compensate for the intrinsic Pb vacancies, which can weaken defect scattering and improve carrier mobility to ≈1230 cm2 V−1 s−1. The room‐temperature power factor triples and reaches ≈32 μW cm−1 K−2, and ZT is significantly enhanced to ≈0.6 in Pb1.006Se. Subsequently, liquid‐like interstitial Cu ions are introduced to inhibit heat conduction without damaging electrical transport. While maintaining a high power factor of ≈25 μW cm−1 K−2, Cu ions strongly suppress phonon transport at high temperature, leading to an ultralow lattice thermal conductivity of ≈0.28 W m−1 K−1 in Pb1.006Cu0.006Se, only 30% of the Cu‐free PbSe. Eventually, a remarkable peak ZT of ≈1.8 at 773 K is achieved along with a high average ZT of ≈1.1 from 300 to 823 K in Pb1.006Cu0.006Se. An outstanding experimental conversion efficiency of ≈7.1% is obtained in the single‐leg device, demonstrating great potential for PbSe as low‐ to mid‐temperature thermoelectrics.

A High Thermoelectric Figure of Merit ZT > 1 in Ba Heavily Doped BiCuSeO Oxyselenides

Light Element Doping and Introducing Spin Entropy: an Effective Strategy for Enhancement of Thermoelectric Properties in BiCuSeO.

Polycrystalline Bicuseo Oxide As A Potential Thermoelectric Material

Enhanced Thermoelectric Properties Of Pb-Doped Bicuseo Ceramics

Complex Electronic Structure and Compositing Effect in High Performance Thermoelectric BiCuSeO.

Rational Electronic and Structural Designs Advance BiCuSeO Thermoelectrics

Enhanced Thermoelectric Performance of Zn-doped Oxyselenides: BiCu1−x Zn X SeO

Electrical and Thermal Transport Behavior in Zn-Doped BiCuSeO Oxyselenides

Thermoelectric properties of Pb-doped BiCuSeO ceramics

High Thermoelectric Performance Realized in a BiCuSeO System by Improving Carrier Mobility Through 3D Modulation Doping.

Remarkable Enhancement in Thermoelectric Performance of BiCuSeO by Cu Deficiencies.

Enhanced Thermoelectric Properties in Bicuseo Oxyselenides Via Zn and S Dual-Site Substitution

High thermoelectric performance of oxyselenides: intrinsically low thermal conductivity of Ca-doped BiCuSeO

High Thermoelectric Performance of BiCuSeO Via Minimizing the Electronegativity Difference in Bi–O Layer

Synergistically Optimizing Electrical and Thermal Transport Properties of BiCuSeO Via a Dual‐Doping Approach

Enhanced thermoelectric performance of BiCuSeO through composite structuring with Pb-and La-doped components

Realizing Ultrahigh Thermoelectric Performance in n‐Type PbSe Through Lattice Planification and Introducing Liquid‐Like Cu Ions

First-Principles Study on Thermoelectric Properties of Bi _2 O _2 Se

Enhanced Thermoelectric Performance of a BiCuSeO System Via Band Gap Tuning.

Enhanced Thermoelectric Performance of BiCuSeO Via Dual-Doping in Both Bi and Cu Sites

Enhancing thermoelectric performance of n-type Bi6Cu2Se4O6 through introducing transition metal elements