Band-gap engineering of carbon nanotubes with grain boundaries

Zhiguo Wang,Yungang Zhou,Yanwen Zhang,Fei Gao
DOI: https://doi.org/10.1021/jp208229b
2012-01-01
Abstract:Structure and electronic properties of carbon nanotubes (CNTs) with grain boundaries (GBs) are investigated using density-functional calculations, where the GBs parallel and perpendicular to the tube axis are considered. Simulation results show that the GBs have a great effect on the electronic properties of the CNTs. For the GBs along the tube axis, the CNTs are narrow or zero band gap (<0.16 eV) materials, independent of the misoritentaion angle and diameter. For the GBs perpendicular to the tube axis, localized electronic states appear within the GBs regions, leading to a larger band gap of up to 0.6 eV. It is convenient to transport and localize the electrons and holes by engineering the GBs. These findings are of great significance for developing carbon-based nanomaterials and electronic devices.
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