Abstract:There are a large number of protons with different energies from the dozens of keV to hundreds of MeV in space environment, which simultaneously act on the bipolar junction transistors (BJTs), and induce different irradiation effect and damage defects. Moreover, interaction between displacement defects and ionization defects occurs. In the paper, the interaction mechanisms between oxide charge and displacement defects in 3DG112 NPN BJTs caused by the combined 70 keV and 170 keV protons with 5MeV proton irradiation are studied. Experimental results show the degradation of current gain increases linearly with increasing the irradiation fluence of the 170 keV and 5MeV protons, but increases nonlinearly for the 70 keV protons, implying that the 170 keV and 5MeV protons mainly induce displacement damage on the NPN BJTs, while the 70 keV protons cause ionization damage. It can be seen from the Geant4 calculation that 70 keV and 170 keV protons cause almost the same ionization damage on the 3DG112 transistors, while have significant difference in displacement damage ability, which is favorable to analyze the effect of displacement damage in oxide layer of NPN BJTs induced by 170 keV and 70 keV protons on ionization damage caused by the subsequent 5MeV protons. DLTS analyses show that 5MeV protons produce mainly displacement defect centers in based-collector junction of 3DG112 transistors, and 170 keV and 70 keV protons only induce almost the same number of the oxide trapped charges. While the combined irradiation can produce the more oxide trapped charges, except displacement defects, showing that displacement damage in oxide layer caused by 170 keV and 70 keV protons can increase the oxide trapped charges during the subsequent 5MeV exposures. Moreover, the more displacement defects in oxide layer will induce more oxide trapped charges, and give more enhanced synergistic effects. These results will help to assess the reliability of BJTs in the space radiation environment.

Simultaneous and Sequential Radiation Effects on Npn Transistors Induced by Protons and Electrons

Combined Radiation Effects of Protons and Electrons on NPN Transistors

Synergistic radiation effects on PNP transistors caused by protons and electrons

Synergistic Effects of NPN Transistors Caused by Combined Proton Irradiations with Different Energies

Radiation Effects of 50-Mev Protons on PNP Bipolar Junction Transistors

Synergistic Effect of Ionization and Displacement Damage in Npn Transistors Caused by Protons with Various Energies

Simulation of Synergistic Effects on Lateral Pnp Bipolar Transistors Induced by Neutron and Gamma Irradiation

Bias Dependence of Synergistic Radiation Effects Induced by Electrons and Protons on Silicon Bipolar Junction Transistors

Evolution of Radiation Defects in NPN Bipolar Junction Transistors Irradiated by 3 MeV Protons

Degradation mechanisms of current gain in NPN transistors

Research on interaction between displacement defects and oxide charge in NPN transistors based on deep level transient spectroscopy

Mechanism of Synergistic Effects of Neutron- and Gamma-Ray-Radiated PNP Bipolar Transistors

Radiation effects on silicon bipolar transistors caused by 3–10 MeV protons and 20–60 MeV bromine ions

The Effects of Gamma Irradiation on Neutron Displacement Sensitivity of Lateral PNP Bipolar Transistors

Two-Dimensional Numerical Simulation Study on the Synergistic Effects of Transient Ionizing Radiation and Electromagnetic Pulse on Bipolar Junction Transistor

Radiation Defects and Annealing Study on PNP Bipolar Junction Transistors Irradiated by 3-Mev Protons

A Direct Evidence of the Annealing Effect of Ionization Damage on Displacement Damage in NPN Transistors

Research on the Combined Effects of Ionization and Displacement Defects in NPN Transistors Based on Deep Level Transient Spectroscopy

Radiation Effects on Bipolar Junction Transistors Induced by 25 Mev Carbon Ions

The Total-Dose-effects of Gamma and Proton Irradiations on High-Voltage Silicon–germanium Heterojunction Bipolar Transistors

Synergistic Effect of Ionization and Displacement Defects in Npn Transistors Induced by 40-Mev Si Ion Irradiation with Low Fluence