Abstract:This study delves into temperature‐ and carrier‐dependent surface recombination at silicon/dielectric interfaces within the 25–90 °C range, employing an advanced technique. This approach offers many unique capabilities, notably separating chemical passivation and charge‐assisted population control and extracting fixed charges in the dielectric layers, the bulk lifetime, and the temperature‐dependent capture cross sections of electrons and holes. Knowledge regarding the temperature dependence of the surface recombination at the interface between silicon and various dielectrics is critically important as it 1) provides fundamental information regarding the interfaces and 2) improves the modeling of solar cell performance under actual operating conditions. Herein, the temperature‐ and carrier‐dependent surface recombination at the silicon–oxide/silicon and aluminum–oxide/silicon interfaces in the temperature range of 25−90 °C using an advanced technique is investigated. This method enables to control the surface carrier population from heavy accumulation to heavy inversion via an external bias voltage, allowing for the decoupling of the bulk and surface contributions to the effective lifetime. Thus, it offers a simple and versatile manner to separate the chemical passivation from the charge‐assisted population control at the silicon/dielectric interface. A model is established to obtain the temperature dependence of the capture cross sections, a critical capability for the optimization of the dielectric layers and the investigation of the fundamental properties of the passivation under field operating conditions.

ANALYSIS OF SHORT CIRCUIT CURRENT OF SILICON CELLS UNDER LOW CONCENTRATION

Silicon Rich Carbide As A Conductive Substrate For Si Qd Solar Cells

Analysis of leakage current in GaAs micro-solar cell arrays

Analyzing temperature-dependent electrical properties of amorphous silicon solar cells: experimental and simulation approach

Interpretation Of The Commonly Observed I-V Characteristics Of C-Si Cells Having Ideality Factor Larger Than Two

Determination of the electrical characteristics and thermal behaviour of a c-Si cell under transient conditions for various concentration ratios

Analysis Of The Thermal And Power Characteristics Of Solar Cell In Concentration

Performance Analysis on a Crystalline Silicon Photovoltaic Cell under Non-Uniform Illumination Distribution with a High Electrical Efficiency

Experimental performance analysis of the concentrated crystalline silicon solar cell——slicing cell

An In-Depth Analysis of the Silicon Solar Cell Key Parameters’ Optimal Magnitudes Using PC1D Simulations

Modeling the Temperature-Dependence of Silicon Diode with Fermi-Dirac Statistics down to 50K

Investigation of Fine Model for Crystalline Silicon Solar Cells under Non-standard Test Conditions

Reassessment of silicon heterojunction cell performance under operating conditions

Photocarrier Radiometry for Noncontact Evaluation of Space Monocrystalline Silicon Solar Cell under Low-Energy Electron Irradiation

Determination of Temperature‐ and Carrier‐Dependent Surface Recombination in Silicon

The Effect Of Non-Uniform Illumination On The Performance Of Conventional Polycrystalline Silicon Solar Cell

STUDY OF RELATIONSHIP BETWEEN MICROCRYSTALLINE SILICON THIN FILM AND SOLAR CELLS

EFFECT OF TEMPERATURE ON PERFORMANCE PARAMETERS OF MULTICRYSTALLINE SILICON SOLAR CELLS AND MODULES

Comparative Study of GaAs and CdTe Solar Cell Performance under Low-Intensity Light Irradiance

Investigation on Significant Efficiency Enhancement of Thin Crystalline Silicon Solar Cells

Infrared Radiation Dynamic Response and Parametric Analysis for Silicon Solar Cell Using Photocarrier Radiometry