Computational Study of Diffusivities in Diamond Ge-Si Alloys

S. L. Cui,L. J. Zhang,W. B. Zhang,Y. Du,H. H. Xu
DOI: https://doi.org/10.2298/jmmb111102021c
2012-01-01
Abstract:A variety of diffusivities in Ge-Si alloys available in the literature were critically reviewed. On the basis of the critically reviewed literature data, the diffusion parameters for self diffusivities and impurity diffusivities in diamond Ge-Si alloys were determined by considering the diffusion mechanism. A phenomenological treatment of the diffusivities in Ge-Si alloys were conducted. The finally obtained atomic mobilities can reproduce most of the diffusivities in diamond Ge-Si alloys as well as the concentration profiles of Ge-Si binary diffusion couples. In addition, the Manning modification on Darken Equation in diamond structure was also tested by using the presently obtained atomic mobilities.
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