Abstract:MoSi2 is widely concerned due to excellent electrical conductivity, oxidation resistance as a typical transition metal silicide. The high-temperature diffusion behavior is one of the important factors for the degradation of MoSi2 coatings. However, the diffusion mechanism in MoSi2 is still unclear. Prior theoretical work mostly focused on defect formation energy, but these are not consistent with the self-diffusion experiments because the migration behaviors were not considered. Therefore, the purpose of this work was to investigate the microscopic diffusion mechanisms of Mo and Si atoms in MoSi2 using density functional theory and the CI-NEB method. We confirmed that the temperature-dependent vibrational contribution has a significant impact on the defect formation free energy. The isolated point defects in MoSi2 will tend to aggregate to form defect complexes, which participate in the atomic diffusion as mediators. The defect migration behaviors of atoms for vacancy mediated, vacancy complex mediated, and antisite assisted jumps were obtained based on electronic structures analysis. The results show that Si diffusion is mediated by intrasublattice jumps of the nearest neighbor Si vacancies. Moreover, the destroyed covalent Mo-Si bonds by Si vacancies and the non-directional weak metal bonds formed by the Mo antisites and Mo atoms could improve the mobility of the Mo atom which results in the low migration barrier. The agreement between our calculations and the reported experimental results indicates that the dominant diffusion mechanism for Mo atoms is mediated by vacancy complex mediated jumps and antisite assisted jumps. It is concluded that the Si vacancy-based defect complexes are likely the diffusion mediators for Mo atom self-diffusion in MoSi2. This work provides a deeper insight into the connection between the atomic mechanism and the macroscopic behavior for the diffusion in the MoSi2, and establishes the basis for further optimizing high-temperature coating materials.

Atomic mobilities, diffusivities and simulation of diffusion growth in the Co–Si system

Diffusion mobilities for the B2-b.c.c. phase in the Ni–Al binary system

Assessment of Mobilities of the B2 Phase in the Nickel-Chromium-Aluminum System

Self-diffusion Mechanisms Based Defect Complexes in MoSi2.

Phase Field Simulation for Non-Isothermal Solidification of Multicomponent Alloys Coupled with Thermodynamics Database

Diffusion kinetics for fcc quinary Cu–Co–Mn–Ni–Si system and its application to precipitation simulations

Atomistic simulations of carbon diffusion and segregation in liquid silicon

Diffusivity and atomic mobility in fcc Cu–Mn–Si alloys: measurements and modeling by CALTPP program

A Kinetic Model of Diffusional Phase Transformations in Ternary Line Compounds and Determination of Diffusion Coefficients: Application to the Nb–Mo–Si System

Solute diffusion calculation in Fe-Si and Fe-Cr-Si multicomponent alloys

Rapid Solidification of Non-Stoichiometric Intermetallic Compounds: Modeling and Experimental Verification

Diffusion Coefficients of the Ni-Co-Fe Alloys Studied by Molecular Dynamics Simulation and CALPHAD Assessment

Interdiffusion and atomic mobility of the Mg-Ag-Zn system

Ab initio study of electronic properties of CoSi2 and NiSi 2 in the fluorite structure

Interdiffusion and Atomic Mobility in BCC-A2 Mo-Zr and Mo-Nb-Zr Alloys with Very Steep Composition Profiles

Development of atomic mobility with quantified uncertainties directly from concentration profiles: a demo in fcc Cu–Ni–Sn system

Thermodynamic and diffusion kinetic studies of the Co-Al–Fe system

Atomistic modeling of metal-nonmetal interphase boundary diffusion

Phase-field Simulation of Solidification in Multicomponent Alloys Coupled with Thermodynamic and Diffusion Mobility Databases

Interdiffusion and atomic mobility in FCC Ag–Cu–Ni alloys

Effect of Interactions Between Elements on the Diffusion of Solutes in Ni X Y Systems and Γ′-Coarsening in Model Ni-based Superalloys