Low-temperature transport properties of individual SnO2 nanowires

Yong-Jun Ma,Feng Zhou,Li Lu,Ze Zhang
DOI: https://doi.org/10.1016/j.ssc.2004.02.013
IF: 1.934
2004-01-01
Solid State Communications
Abstract:Stannic oxide (SnO2) nanowires have been prepared by Chemical vapor deposition (CVD). The low-temperature transport properties of a single SnO2 nanowire have been studied. It is found that the transport of the electrons in the nanowires is dominated by the Efros-Shklovskii variable-range hopping (ES-VRH) process due to the enhanced Coulomb interaction in this semiconducting nanowire. The temperature dependence of the resistance follows the relation lnR∼T−1/2. On the I–V and dI/dV curves of the nanowire a Coulomb gap-like structure at low temperatures appears.
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