Hydrogen Sensors Based On Pt-Algan/Gan Back-To-Back Schottky Diode

Xinhua Wang,Xiaoliang Wang,Hongling Xiao,Chun Feng,Xiaoyan Wang,Baozhu Wang,Cuibai Yang,Junxi Wang,Cuimei Wang,Junxue Ran,Guoxin Hu,Jinmin Li
DOI: https://doi.org/10.1002/pssc.200779167
2008-01-01
Abstract:In this paper, platinum (Pt) with a thickness of 45 nm was sputtered on the surface of AlGaN/GaN heterostructure to form the Schottky contact and the back-to-back Schottky diodes were characterized for H-2 sensing at room temperature. Both the forward and reverse current of the devices increased with exposure to H-2 gas, which was attributed to Schottky barrier height reduction caused by hydrogen absorption in the catalytic metals. A shift of 0.7 V at 297 K was obtained at a fixed forward current of 0.1 mA after switching from N-2 to 40% H-2 in N-2. The sensor's responses under different concentrations from 2500 ppm H-2 to 40% H-2 in N-2 at 297 K were investigated. Time response of the sensor at a fixed bias of 1 V was given. Finally, the decrease of the Schottky barrier height and the sensitivity of the sensor were calculated. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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