Effects of growth temperature on the characteristics of ZnO epitaxial films deposited by metalorganic chemical vapor deposition

B.P. Zhang,K. Wakatsuki,N.T. Binh,N. Usami,Y. Segawa
DOI: https://doi.org/10.1016/S0040-6090(03)01466-4
IF: 2.1
2004-01-01
Thin Solid Films
Abstract:Growth characteristics and optical properties of ZnO films epitaxially grown on Al2O3 (0001) substrates at temperatures of Tg=200–500 °C by metalorganic chemical vapor deposition were investigated. The in-plane orientation of ZnO unit cells was different for Tg=200 °C and Tg⩾300 °C. The surface morphology varied significantly: smooth surface with cracks at Tg⩽250 °C, facet and column growth at 300 °C⩽Tg<400 °C and grain surface for even higher growth temperatures. These results indicate that one can obtain flat ZnO films or ZnO rods by simply selecting the growth temperature. The crystalline and optical quality became better for higher growth temperatures. Mechanisms responsible for these observations are discussed.
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