Electrodeposition of Bi₂Te₃films and micro-pillar arrays on p-Si(100) wafers

Da-Wei Liu,Ying Xu,Jing-Feng Li

DOI: https://doi.org/10.1002/pssa.200925149

2010-01-01

Abstract:BBi(2)Te(3) films and micro-pillar arrays were electrodeposited, respectively onto p Si(100) waters and into micro-templates that were etched on the same waters with reactivve on etching (RIE). With the potentials of -100 to -300mV (Vs. saturated calomel electrode), Bi(2)Ti(3) films can be obtained from Bi(3+) and HTeO(2)(+) solution, which showed a (001) preferential orientation. Micro-templated with vertical holes of 15-18 mu m in diameter and 40 mu m in depth were etched on p-si(100) wafers, and then were set as cathodes. During electrodedeposition SiO(2) layer on the wafer surface served an insulating layer and Bi(2)Te(3) only crystallized on the inner wall of etched holes with the potentials of -300 to -700 mv Bi(2)Te(3) pillar arrays can be fabricated by filling electrodeposition, and the filling ratios and qualities were sensitive to the potentials. After removing the templates with RIE , the Bi(2)Te(3) pillars can stand on the wafer surfaces. (C) WILEY-VCH Verlag Gmbh & Co. KGaA, Weinheim