Effect of rare earth oxide doping on microstructure and piezoelectric properties of BCTSZ ceramics
Wenzhe Guo,Qibin Liu,Shoulong Wu,Boqian Chang
DOI: https://doi.org/10.1007/s10854-024-13303-y
2024-08-21
Journal of Materials Science Materials in Electronics
Abstract:The five types of rare earth oxides are introduced as dopants into Ba 0.98 Ca 0.02 Ti 0.94 Sn 0.04 Zr 0.02 (BCTSZ) ceramics using the conventional solid-state approach. This leads to the fabrication of lead-free piezoelectric ceramics denoted as (1– x ) (Ba 0.98 Ca 0.02 Ti 0.94 Sn 0.04 Zr 0.02 )- x M 2 O 3 (0 mol% ≤ x ≤ 0.12 mol%, M = La, Ce, Pr, Nd, Sm), where the molar fraction x ranges from 0 to 0.12 and M represents the dopant elements La, Ce, Pr, Nd, and Sm. The effect of doping the five different rare earth oxides on the phase structure, microstructure, and electrical properties of BaTiO 3 -based piezoelectric ceramics are investigated. The results reveal the formation of the morphotropic phase boundary (MPB) in all ceramics at a M 2 O 3 doping concentration of x = 0.06 mol%. Samples with morphotropic phase boundary typically exhibit relatively good piezoelectric properties. In comparison to other rare earth oxides, BCTSZ ceramics doped with Nd 2 O 3 demonstrate larger grain sizes and more nano-ferroelectric domains, achieving optimal electrical properties at doping concentration of x = 0.06 mol%. The electrical properties are as follows: d 33 = 463 pC/N, k p = 56.56%, T O-T = 36.5 °C, T C = 87.5 °C, ε r = 3720, and tan δ = 2.07%. The effect of various rare earth oxides on the electrical properties of BaTiO 3 -based piezoceramics under different doping contents were studied through numerous experiments.
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied