Controllable CVD Route to CoS and MnS Single-Crystal Nanowires.

JP Ge,YD Li

DOI: https://doi.org/10.1039/b307452h

IF: 4.9

2003-01-01

Chemical Communications

Abstract:CoS and MnS nanowires were prepared through a simple chemical vapor deposition process. The adopted synthetic route is expected to be applicable for the synthesis of other metal sulfide semiconductor nanowires.

What problem does this paper attempt to address?

Ultrafast growth of single-crystalline Si nanowires

J.B. Chang,J.Z. Liu,P.X. Yan,L.F. Bai,Z.J. Yan,X.M. Yuan,Q. Yang

DOI: https://doi.org/10.1016/j.matlet.2005.12.085

IF: 3

2006-01-01

Materials Letters

Abstract:Silicon nanowires (SiNWs) have been catalytically synthesized by heat treatment of Si nanopowder at 980 °C. The SiNWs comprise crystalline Si nanoparticles interconnected with metal catalyst. The formation mechanism of nanowires generally depends on the presence of Fe catalysts in the synthesis process of solid–liquid–solid (SLS). Although gas phase of vapor–liquid–solid (VLS) method can be used to produce various of different nanowire materials, growth model based on the SLS mechanism by heat treatment is more ascendant for providing ultrafast growth of single-crystalline Si nanowires and controlling the diameter of them easily. The growth of single-crystalline SiNWs and morphology were discussed.
One-Step Synthesis of Metal/Semiconductor Heterostructure NbS2/MoS2

Qundong Fu,Xiaowei Wang,Jiadong Zhou,Juan Xia,Qingsheng Zeng,Danhui Lv,Chao Zhu,Xiaolei Wang,Yue Shen,Xiaomin Li,Younan Hua,Fucai Liu,Zexiang Shen,Chuanhong Jin,Zheng Liu

DOI: https://doi.org/10.1021/acs.chemmater.7b05117

IF: 10.508

2018-01-01

Chemistry of Materials

Abstract:Chemical vapor deposition (CVD) has proven its surpassing advantages, such as larger scale, interlayer orientation control, and clean interface, in the synthesis of transitional metal dichalcogenide (TMDC) semiconductor/semiconductor van der Waals (vdW) heterostructures. However, it is suffering problems of high melting points and low chemical reactivity of metal oxide feedstocks in the preparation of high-quality metal/semiconductor (M/S) TMDC vdW heterostructures. Here, for the first time, we report the synthesis of the M/S TMDC vdW heterostructure NbS2/MoS2 via a one-step halide-assisted CVD method, which effectively overcomes the drawbacks of metal oxide precursors. This one-step method provides the high quality and clean interface of the NbS2/MoS2 heterostructure, which has been proved by the transmission electron microscopy characterization. A mechanism that MoS2 finishes the growth first and subsequently serves as a superior substrate for the growth of NbS2 is proposed. This novel method will open up new opportunities in the syntheses of other M/S TMDC vdW heterostructures and will facilitate the research of the TMDC M/S interface.
Two‐Dimensional Layered Heterostructures Synthesized from Core–Shell Nanowires

qi zhang,xu xiao,ruiqi zhao,danhui lv,guanchen xu,zhixing lu,lifei sun,shizhe lin,xiang gao,jun zhou,chuanhong jin,feng ding,l jiao

DOI: https://doi.org/10.1002/anie.201502461

2015-01-01

Angewandte Chemie

Abstract:Controlled stacking of different two-dimensional (2D) atomic layers will greatly expand the family of 2D materials and broaden their applications. A novel approach for synthesizing MoS2/WS2 heterostructures by chemical vapor deposition has been developed. The successful synthesis of pristine MoS2/WS2 heterostructures is attributed to using core-shell WO3-x/MoO3-x nanowires as a precursor, which naturally ensures the sequential growth of MoS2 and WS2. The obtained heterostructures exhibited high crystallinity, strong interlayer interaction, and high mobility, suggesting their promising applications in nanoelectronics. The stacking orientations of the two layers were also explored from both experimental and theoretical aspects. It is elucidated that the rational design of precursors can accurately control the growth of high-quality 2D heterostructures. Moreover, this simple approach opens up a new way for creating various novel 2D heterostructures by using a large variety of heteronanomaterials as precursors.
Silicon Nanowire Synthesis by Chemical Vapor Deposition

王永成,唐静,郑耿锋

DOI: https://doi.org/10.1360/032013-241

2013-01-01

Scientia Sinica Chimica

Abstract:Semiconducting silicon nanowires (SiNWs) represent one of the most interesting research directions in nanoscience and nanotechnology, and have been successfully applied in the fields of biological sensing, lithium-ion battery, solar cells and so on, with capabilities of realizing structural and functional complexity through rational design and synthesis. Chemical vapor deposition (CVD) method is one of the most common methods in the bottom-up approach. This review provides a brief summary of SiNW synthesis through the CVD method in the past decade, which mainly divided into the single structured and complex structured SiNWs. The synthesis of single structured SiNWs includes intrinsic, doped, and super-long SiNWs. The synthesis of complex structured SiNWs includes the axial, radial heterostructures, kinked, and branched SiNWs.
Novel route to WOx nanorods and WS2 nanotubes from WS2 inorganic fullerenes.

Yan-Hui Li,Yi Min Zhao,Ren Zhi Ma,Yan Qiu Zhu,Niles Fisher,Yi Zheng Jin,Xin Ping Zhang

DOI: https://doi.org/10.1021/jp062427j

2006-01-01

Abstract:WO(x) (2 < x < 3) and WS(2) nanostructures have been widely praised due to applications as catalysts, solid lubricants, field emitters, and optical components. Many methods have been developed to fabricate these nanomaterials; however, most attention was focused on the same dimensional transformation from WO(x) nanoparticles or nanorods to WS(2) nanoparticles or nanotubes. In a solid-vapor reaction, by simply controlling the quantity of water vapor and reaction temperature, we have realized the transformation from quasi-zero-dimensional WS(2) nanoparticles to one-dimensional W(18)O(49) nanorods, and subsequent sulfuration reactions have further converted these W(18)O(49) nanorods into WS(2) nanotubes. The reaction temperature, quantity of water vapor, and pretreatment of the WS(2) nanoparticle precursors are important process parameters for long, thin, and homogeneous W(18)O(49) nanorods growth. The morphologies, crystal structures, and circling transformation mechanisms of sulfide-oxide-sulfide are discussed, and the photoluminescence properties of the resulting nanorods are investigated using a Xe lamp under an excitation of 270 nm.
Synthesis and characterization of multiwalled carbon nanotube/CdS core/shell heterostructures

Hongyu Sun,Yan Chen,Xiaohong Li,Wei Li,Yanwu Xie,Baoting Liu,Xiangyi Zhang

DOI: https://doi.org/10.1016/j.ssc.2010.02.015

IF: 1.934

2010-01-01

Solid State Communications

Abstract:Multiwalled carbon nanotube (MWCNT)/CdS core/shell heterostructures have been successfully synthesized via a simple solution-phase method. The thickness of CdS shells can be facilely tuned by either the reaction temperature or time. The CdS nanoparticles are first formed directly on the surface of MWCNT, and then a uniform CdS sheath is yielded via orientated aggregation processes. The present work provides a simple route to obtain MWCNT-based core/shell heterostructures and thus is of wide interest for the studies of nanomaterials and nanodevices.
Novel Route to WOxNanorods and WS2Nanotubes from WS2Inorganic Fullerenes

Yan-Hui Li,Yi Min Zhao,Ren Zhi Ma,Yan Qiu Zhu,Niles Fisher,Yi Zheng Jin,Xin Ping Zhang

DOI: https://doi.org/10.1021/jp062427j

2006-01-01

Abstract:WOx (2 < x < 3) and WS2 nanostructures have been widely praised due to applications as catalysts, solid lubricants, field emitters, and optical components. Many methods have been developed to fabricate these nanomaterials; however, most attention was focused on the same dimensional transformation from WOx nanoparticles or nanorods to WS2 nanoparticles or nanotubes. In a solid-vapor reaction, by simply controlling the quantity of water vapor and reaction temperature, we have realized the transformation from quasi-zero-dimensional WS2 nanoparticles to one-dimensional W18O49 nanorods, and subsequent sulfuration reactions have further converted these W18O49 nanorods into WS2 nanotubes. The reaction temperature, quantity of water vapor, and pretreatment of the WS2 nanoparticle precursors are important process parameters for long, thin, and homogeneous W18O49 nanorods growth. The morphologies, crystal structures, and circling transformation mechanisms of sulfide-oxide-sulfide are discussed, and the photoluminescence properties of the resulting nanorods are investigated using a Xe lamp under an excitation of 270 nm.
Selective Atmospheric Pressure Chemical Vapor Deposition Route to CdS Arrays, Nanowires, and Nanocombs

J. P. Ge,Y. D. Li

DOI: https://doi.org/10.1002/adfm.200305051

IF: 19

2004-01-01

Advanced Functional Materials

Abstract:CdS arrays, nanowires, and nanocombs were selectively prepared through an atmospheric pressure chemical vapor deposition (APCVD) process with CdCl2 and S as sources. The morphologies could be controlled by adjusting the deposition position, the temperature, and the flux of the carrier gas. The phase structure, morphologies, and photoluminescence properties of the CdS products were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), and photoluminescence (PL) spectra. The formation mechanism of the nanowires is discussed on the basis of the experimental results. The adopted synthetic route is expected to be applied in the synthesis of other metal sulfide one-dimensional (1D) nanostructures.
Synthesis of La1-xCaxMnO3 nanowires by a sol-gel process

Ma Xiangyang,Hui Zhang,Jin Xu,Junjie Niu,Qin Yang,Jian Sha,Deren Yang

DOI: https://doi.org/10.1016/S0009-2614(02)01282-4

IF: 2.719

2002-01-01

Chemical Physics Letters

Abstract:La1−xCaxMnO3 (LCMO) nanowires were prepared using a simple sol–gel process and nano-channel alumina (NCA). X-ray diffraction (XRD) and selected-area electron diffraction (SAED) indicate that the nanowires are of monoclinic perovskite structure. Transmission electron microscopy (TEM) shows that the diameters of nanowires are around 30 nm. Furthermore, high-resolution TEM reveals a clear lattice image of {021} planes in a LCMO nanowire. It can be expected that the method presented in this Letter is also appropriate for the preparation of nanowires of other mono-component or multi-component oxides.
Solvothermal Synthesis and Characterization of Uniform CdS Nanowires in High Yield

QQ Wang,G Xu,GR Han

DOI: https://doi.org/10.1016/j.jssc.2005.06.005

IF: 3.3

2005-01-01

Journal of Solid State Chemistry

Abstract:Large-scale CdS nanowires with uniform diameter and high aspect ratios were synthesized using a simple solvothermal route that employed CdCl2 and S powder as starting materials, ethylenediamine (en) as the solvent. X-ray diffraction (XRD) pattern and transmission electron microscopy (TEM) images show that the products are hexagonal structure CdS nanowires with diameter of 40nm and length up to 10μm. Selected area electron diffraction (SAED) and high resolution TEM (HRTEM) studies indicate the single-crystalline nature of CdS nanowires with an oriented growth along the c-axis direction. The optical properties of the products were characterized by optical absorption spectra and photoluminescence spectra. Based on the results of contrastive experiments, it is found that the sulfur source and the solvent play significant roles in the formation of uniform nanowires. A possible formation mechanism of nanowires is discussed.
The synthesis and morphological control of nanocrystalline pyrite nickel disulfide and cobalt disulfide

Qian Xuefeng,Li Yadong,Xie Yi,Qian Yitai

DOI: https://doi.org/10.1016/S0254-0584(00)00269-8

IF: 4.778

2000-01-01

Materials Chemistry and Physics

Abstract:Nanocrystalline CoS2 and NiS2 have been successfully prepared through a solventothermal synthetic route at 130°C. The final products are characterized by X-ray powder diffraction (XRD) and transmission electron microscopy (TEM). The sulfur-to-metal ratio of the as-prepared products is ca. 1.99–1 and 1.98–1 for CoS2 and NiS2, respectively. TEM shows that with the change of solvents, the morphologies of the as-prepared sulfides can be controlled.
Synthesis of Alloyed Zn1–xMnxS Nanowires with Completely Controlled Compositions and Tunable Bandgaps

Jing Cai,Sheng Wang,Kefu Zhu,Yucheng Wu,Lizhao Zhou,Yongliang Zhang,Qiang Wu,Xizhang Wang,Zheng Hu

DOI: https://doi.org/10.1039/c7ra12714f

IF: 4.036

2018-01-01

RSC Advances

Abstract:This study reported the successful synthesis of Zn1–xMnxS nanowires with completely controlled compositions (0 ≤ x ≤ 1); the x values could be well controlled by tuning the feeding ratio of [(C4H9)2NCS2]2Zn to [(C4H9)2NCS2]2Mn precursors.
A Versatile Chemical Vapor Deposition Method to Synthesize One-Dimensional Silica-Sheathed Nanostructures

D. P. Wei,Y. Ma,H. Y. Pan,Q. Chen

DOI: https://doi.org/10.1021/jp711963p

2008-01-01

Abstract:We developed a simple and versatile chemical vapor deposition (CVD) method to synthesize uniform silica sheaths with controlled thickness on a series of one-dimensional nanostructures, such as ZnS, CdS, ZnSe, Si, and Ge nanowires. The nanowire/silica nanocables were characterized using electron microscopy and energy dispersive X-ray spectrometry. The silica sheath was observed to dramatically improve the thermal stability of the nanowires while keep their optical properties unchanged. The growth mechanism and the synthesis conditions for the silica shell were studied.
yed Zn 1 – x Mn x S nanowires with completely controlled compositions and tunable bandgaps †

Jing Cai,Sheng Wang,Kefu Zhu,Yucheng Wu,L. Zhou,Yongliang Zhang,Qiang Wu,Xizhang Wang,Z. Hub

2017-01-01

Abstract:This study reported the successful synthesis of Zn1–xMnxS nanowires with completely controlled compositions (0 # x # 1); the x values could be well controlled by tuning the feeding ratio of [(C4H9)2NCS2]2Zn to [(C4H9)2NCS2]2Mn precursors. The bandgaps of Zn1 xMnxS nanowires showed nonlinear bowing character versus the composition. This result provided an effective route for designing Mn-based ternary chalcogenide nanowires with specific bandgaps, which is significant for their better application in photonics and spintronics.
Preparation of Highly Flexible SiC Nanowires by Fluidized Bed Chemical Vapor Deposition

Rongzheng Liu,Malin Liu,Jiaxing Chang,Youlin Shao,Bing Liu

DOI: https://doi.org/10.1002/cvde.201507171

2015-01-01

Chemical Vapor Deposition

Abstract:High flexible SiC nanowires with diameters in the range of 10 to 50 nm and lengths of several hundred micrometers to several millimeters are synthesized using a novel catalyst‐assisted fluidized bed chemical vapor deposition method. Methyltrichlorosilane (MTS) is used as source material and particles containing cobalt were used as catalyst. The fluidized bed is specially designed to form a perpendicular uneven temperature distribution. Suspended nanosized liquid catalyst droplets are produced at middle high temperature zone and SiC nanowires are formed in situ on the catalyst droplets then accumulated at the upper part of fluidized bed. The nanowires exhibit a single crystal feature with some stacking faults. Transmission electron microscopy (TEM) analysis verifies a growth direction along the <111> axis of the nanowires. A blue shift optical emission band at about 420 nm is detected using photoluminescence spectroscopy. From the high‐resolution TEM investigation, a nanoscale smooth plane between the nanowire and the catalyst tip is observed and the two phases exhibit highly epitaxial growth interface. The growth process of the nanowires is discussed and a possible formation mechanism is proposed.
Selected-Control Hydrothermal Synthesis of α- and β-MnO2 Single Crystal Nanowires

Xun Wang,Yadong Li

DOI: https://doi.org/10.1021/ja0177105

IF: 15

2002-01-01

Journal of the American Chemical Society

Abstract:A selective-control hydrothermal method has been developed in the preparation of alpha- and beta-MnO(2) single-crystal nanowires. The crystal structure and morphology of the final products can be influenced by the concentration of NH(4)(+) and SO(4)(2-).
Preparation of CdS Single‐Crystal Nanowires by Electrochemically Induced Deposition

DS Xu,YJ Xu,DP Chen,GL Guo,LL Gui,YQ Tang

DOI: https://doi.org/10.1002/(sici)1521-4095(200004)12:7<520::aid-adma520>3.0.co;2-#

IF: 29.4

2000-01-01

Advanced Materials

Abstract:CdS is one of the most important II-VI semiconductors, with applications in solar cells, optoelectronics. and electronic devices. Here a new process for the preparation of CdS single-crystal nanowires (see Figure) is presented, in which the nanowires are prepared by electrochemically induced deposition into the pores of anodic aluminum oxide templates.
Synthesis of Molybdenum Disulfide Nanowire Arrays Using a Block Copolymer Template

Wei Wei,Leith Samad,Jonathan W. Choi,Yongho Joo,Austin Way,Michael S. Arnold,Song Jin,Padma Gopalan

DOI: https://doi.org/10.1021/acs.chemmater.6b01453

IF: 10.508

2016-05-16

Chemistry of Materials

Abstract:A simple route for the synthesis of arrays of sub-20-nm-wide molybdenum disulfide (MoS2) nanowires using a self-assembled cylinder forming poly(styrene-b-2-vinylpyridine) thin films is demonstrated. The protonated 2-vinylpyridine selectively seeds molybdenum precursors in the aqueous solution, and the precursors are converted to molybdenum sulfide during a sulfur annealing process. An ultraviolet cross-linking step is introduced to ensure the successful transfer of the morphologies of the block copolymer templates to the MoS2 nanowires. The nanowires transition from an amorphous to a crystalline MoS2 phase upon thermal annealing in the presence of sulfur, as confirmed by X-ray photoelectron spectroscopy, Raman spectroscopy, X-ray diffraction, and transmission electron microscopy. This work provides a pathway to large area, dense, spatially localized arrays of transition metal dichalcogenide nanowires for catalytic and sensing applications.

materials science, multidisciplinary,chemistry, physical
Colloidal Synthesis of -MnS Nanorods with Uniform Controlled Size and Pure ?002? Growth Direction

Yongliang Zhang,Jing Cai,Xizhang Wang,Junyu Lei,Qiang Wu,Zheng Hu,Zehua Zhao

DOI: https://doi.org/10.1021/acs.jpclett.2c02079

2022-01-01

Abstract:One dimensional (1D) compound semiconductor nanostructures have unique anisotropic optical, electrical, and physical properties. Synthesis of large scale 1D nanostructures with pure crystallographic growth direction by a colloidal route and finding an easy method to prove it were significant for further exploring their unique anisotropic properties. Additionally, MnS is one of the most important optoelectronic and magnetic semiconductors. Herein, the large scale gamma-MnS nanorods with completely pure < 002 > growth direction were first synthesized and convinced by solid evidence using the X-ray diffraction method. Compared with the standard diffraction pattern of gamma-MnS powder, the < 002 > oriented long gamma-MnS nanorods showed only the (100),(110), (200), and (210) peaks while other diffraction peaks disappeared. This study opened a door for the synthesis of the 1D colloidal nanostructures with pure crystallographic growth direction at large scale, benefiting the manufacture of a novel apparatus based on their anisotropic properties.
Two‐Dimensional Semiconductors Grown by Chemical Vapor Transport

Dake Hu,Guanchen Xu,Lei Xing,Xingxu Yan,Jingyi Wang,Jingying Zheng,Zhixing Lu,Peng Wang,Xiaoqing Pan,Liying Jiao

DOI: https://doi.org/10.1002/anie.201700439

2017-01-01

Angewandte Chemie

Abstract:Developing controlled approaches for synthesizing high-quality two-dimensional (2D) semiconductors is essential for their practical applications in novel electronics. The application of chemical vapor transport (CVT), an old single-crystal growth technique, has been extended from growing 3D crystals to synthesizing 2D atomic layers by tuning the growth kinetics. Both single crystalline individual flakes and continuous films of 1 L MoS2 were successfully obtained with CVT approach at low growth temperatures of 300-600 °C. The obtained 1 L MoS2 exhibits high crystallinity and comparable mobility to mechanically exfoliated samples, as confirmed by both atomic resolution microscopic imaging and electrical transport measurements. Besides MoS2 , this method was also used in the growth of 2D WS2 , MoSe2 , Mox W1-x S2 alloys, and ReS2 , thus opening up a new way for the controlled synthesis of various 2D semiconductors.

Controllable CVD Route to CoS and MnS Single-Crystal Nanowires.

Ultrafast growth of single-crystalline Si nanowires

One-Step Synthesis of Metal/Semiconductor Heterostructure NbS2/MoS2

Two‐Dimensional Layered Heterostructures Synthesized from Core–Shell Nanowires

Silicon Nanowire Synthesis by Chemical Vapor Deposition

Novel route to WOx nanorods and WS2 nanotubes from WS2 inorganic fullerenes.

Synthesis and characterization of multiwalled carbon nanotube/CdS core/shell heterostructures

Novel Route to WO<i><sub>x</sub></i>Nanorods and WS<sub>2</sub>Nanotubes from WS<sub>2</sub>Inorganic Fullerenes

Selective Atmospheric Pressure Chemical Vapor Deposition Route to CdS Arrays, Nanowires, and Nanocombs

Synthesis of La1-xCaxMnO3 nanowires by a sol-gel process

Solvothermal Synthesis and Characterization of Uniform CdS Nanowires in High Yield

The synthesis and morphological control of nanocrystalline pyrite nickel disulfide and cobalt disulfide

Synthesis of Alloyed Zn1–xMnxS Nanowires with Completely Controlled Compositions and Tunable Bandgaps

A Versatile Chemical Vapor Deposition Method to Synthesize One-Dimensional Silica-Sheathed Nanostructures

yed Zn 1 – x Mn x S nanowires with completely controlled compositions and tunable bandgaps †

Preparation of Highly Flexible SiC Nanowires by Fluidized Bed Chemical Vapor Deposition

Selected-Control Hydrothermal Synthesis of α- and β-MnO<sub>2</sub> Single Crystal Nanowires

Preparation of CdS Single‐Crystal Nanowires by Electrochemically Induced Deposition

Synthesis of Molybdenum Disulfide Nanowire Arrays Using a Block Copolymer Template

Colloidal Synthesis of -MnS Nanorods with Uniform Controlled Size and Pure ?002? Growth Direction

Two‐Dimensional Semiconductors Grown by Chemical Vapor Transport