A 0.45v 687pw Low Noise Amplifier Front-End with 1.73 Nef for Energy-Scavenging Iot Sensors
Shuo Li,Xiong Zhou,Sanfeng Zhang,Haihang Yao,Qiang Li,Vahid Behravan,Arun Natarajan,Zhiliang Hong,Patrick Y. Chiang
DOI: https://doi.org/10.1109/ieee-iws.2016.7585429
2016-01-01
Abstract:This paper presents a sub-nanowatt front-end amplifier for ultra-low-power wireless IoT sensor nodes. This chip consists of an instrumentation amplifier, a DC servo loop, a clock generator and a bias circuit. It is fully integrated, and therefore does not rely on any off-chip references. Fabricated in 65nm CMOS process, measurement results show that the amplifier system achieves 39dB gain and 0.1-130Hz bandwidth, sufficient for many low-frequency sensor interface applications. The measured power is 687pW for a 0.45V supply voltage, which when compared with previously published AFEs, is the only sub-nW low-noise amplifier.