An Optically Controlled Sic Lateral Power Transistor Based on Sic/Sicge Superjunction Structure

Pu Hongbin,Cao Lin,Ren Jie,Chen Zhiming,Nan Yagong

DOI: https://doi.org/10.1088/1674-4926/31/4/044001

2010-01-01

Journal of Semiconductors

Abstract:>An optically controlled SiC/SiCGe lateral power transistor based on superjunction structure has been proposed, in which n-SiCGe/p-SiC superjunction structure is employed to improve device figure of merit.Performance of the novel optically controlled power transistor was simulated using Silvaco Atlas tools,which has shown that the device has a very good response to the visible light and the near infrared light.The optoelectronic responsivities of the device at 0.5μm and 0.7μm are 330 mA/W and 76.2 mA/W at 2 V based voltage,respectively.