Antiferromagnetic spin quantum characteristics of La0.7Sr0.3MnO3 and ZnO heterojunction

Ren Ren,Xiaoke Qin,Weiren Wang

2013-01-01

Rare Metal Materials and Engineering

Abstract:The La0.7Sr0.3MnO3 and ZnO deposition films prepared by the pulse laser deposition on LAO (100) substrates were investigated. The sample with different doped concentrations led to interaction between electron spins and orbital order, as well as short-range polaronic disorder. XRD patterns found that La1-xSrxMnO3 and ZnO diffraction peak had (100), (200) and (002) dominant orientations. The multilayers films lattices were matched with each other. The V-I properties and R-T curves show the heterojunction have half-metal optoelectronic conductivity properties. We measured the photoresistances and MR of LAO/La0.7Sr0.3MnO3/ZnO heterojunction in the optical and magnetic field respectively. The results indicate that the La0.7Sr0.3MnO3 layer with x=0.3 similar to 0.4 exhibited the metal to insulator transition at T-p 250 K and paramagnetic to antiferromagnetic phase transition at T-c 175 K. The La0.7Sr0.3MnO3/ZnO heterojunction realized quantum energy band clipping and rebuilt the energy band structure. The photoresistance with irradiation of pulsed and CW laser below T-p 220 K are increased. The results show that the changes of spin orientation, barriers concentration, state density and spin-orbit interactions led to photoresistance. The polarization and interface strain between La0.7Sr0.3MnO3 and ZnO heterojunction occurred related with defect structure at dissipation layer interface.