Gate Controlled Thin Film Electron Emission Cathode Based on InOx Nanoislands/C

朱丹,李德杰,王健
DOI: https://doi.org/10.3969/j.issn.1002-8935.2009.03.010
2009-01-01
Abstract:Gate controlled thin film electron emission cathode based on InOx nanoislands/C is reported,and its fabrication technology and characters are studied.RF sputtered ZnO is used as channel layer.Amorphous carbon film on InOx nanoislands is deposited on the channel layer.With the ununiformity introduced by InOx nanoislands,when enough current density is applied in the InOx nanoislands/C composed layer,some local gaps are formed instantaneously in the composed layer by current heating effect and these gaps become electron emitting area.With this structure,the conduction current can be controlled by the gate voltage;so the electron emission from the cathode can be controlled by the gate voltage.
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