Abstract:Tungsten trioxide (WO3) thin films were synthesised by electrodeposition using peroxotungtic acid as the precursor electrolyte solution for use as photoanodes in a photoelectrochemical cell for solar hydrogen applications. The films were coated at deposition potentials varying from 0.30 to 0.90V versus Ag/AgCl in order to study the effect of the potential on the mineralogical, morphological, optical, and photoelectrochemical properties of the nanoparticulate films. The films were composed of monoclinic WO3, the degree of crystallinity and preferred orientation of the orthogonal planes of which increased with deposition potential and associated film thickness. In contract, increasing the deposition potential had a minimal impact on the particle sizes, which were in the range ∼80-90nm. While films deposited at the potential range of 0.30 to 0.60V showed controlled nanostructures with thicknesses in the range 168-431nm, increasing the deposition potential from 0.70 to 0.90V resulted in rapid increase in film, which led to cracking from drying stress. Linear voltammetry data suggested that the optimal potential for the deposition of stable films was in the range 0.37 to 0.60V. However, the data for the film deposited at a potential of 0.30V indicated a film of high quality. Further, the data for the film deposited at a potential of 0.60V indicated a film of a low quality and so this voltage represents a transition point for stable-unstable film growth and unstressed-stressed nanostructure from drying. The trends in the optical transmission properties showed that the photocatalytic activity of the films could be expected to decrease with increasing potential, thickness, and crystallinity. That is, the band gap and projected absorption edge exhibited a red shift. This was attributed to the relative effects of the surface and volume band gaps, in which the latter would increase relative to the former with increasing thickness. The photocurrent densities reflected the effects of increasing solid volume and decreasing band gap with increasing film thickness. The exception was the reduced performance of the film deposited at the potential of 0.60 V. This outcome was attributed to the competition between the photogeneration and recombination of electron-hole pairs, where the potential of 0.60V represents the transition point described above.

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