Abstract:Tin selenide (SnSe) and tin sulfide (SnS) have recently attracted particular interest due to their great potential for large-scale thermoelectric applications. A complete prediction of the thermoelectric performance and the understanding of underlying heat and charge transport details are the key to further improvement of their thermoelectric efficiency. We conduct comprehensive investigations of both thermal and electrical transport properties of SnSe and SnS using first-principles calculations combined with the Boltzmann transport theory. Due to the distinct layered lattice structure, SnSe and SnS exhibit similarly anisotropic thermal and electrical behaviors. The cross-plane lattice thermal conductivity κL is 40–60% lower than the in-plane values. Extremely low κL is found for both materials because of high anharmonicity, while the average κL of SnS is ∼8% higher than that of SnSe from 300 to 750 K. It is suggested that nanostructuring would be difficult to further decrease κL because of the short mean free paths of dominant phonon modes (1–30 nm at 300 K), while alloying would be efficient in reducing κL considering that the relative κL contribution (∼65%) of optical phonons is remarkably large. On the electrical side, the anisotropic electrical conductivities are mainly due to the different effective masses of holes and electrons along the a, b, and c axes. This leads to the highest optimal ZT values along the b axis and lowest ones along the a axis in both p-type materials. However, the n-type ones exhibit the highest ZTs along the a axis due to the enhancement of power factor when the chemical potential gradually approaches the secondary conduction band valley that causes significant increase in electron mobility and density of states. Owing to the larger mobility and smaller κL along the given direction, SnSe exhibits larger optimal ZTs compared with SnS in both p- and n-type materials. For both materials, the peak ZTs of n-type materials are much higher than those of p-type ones along the same direction. The predicted highest ZT values at 750 K are 1.0 in SnSe and 0.6 in SnS along the b axis for the p-type doping, while those for the n-type doping reach 2.7 in SnSe and 1.5 in SnS along the a axis, rendering them among the best bulk thermoelectric materials for large-scale applications. Our calculations show reasonable agreements with the experimental results and quantitatively predict the great potential in further enhancing the thermoelectric performance of SnSe and SnS, especially for the n-type materials.

Evaluation of Anisotropic Thermoelectric Power of Resi1.75

Anisotropy of Mobility Ratio Between Electron and Hole along Different Orientations in Regexsi1.75-X Thermoelectric Single Crystals

High Thermoelectric Performance of a Sc2Si2Te6 Monolayer at Medium Temperatures: an Ab Initio Study.

Effects of Alloying Elements on Thermoelectric Properties of ReSi 1.75

Anisotropic Thermoelectric-Power Of A Superconducting Bi2sr2cacu2o8 Crystal In The A-B Plane

Electronic Structure, Bonding Character, and Thermoelectric Properties of Semiconducting Rhenium Silicide with Doping

First Principle Study of Anisotropic Thermoelectric Material: Sb2Si2Te6

Thermal transport in thermoelectric materials of SnSSe and SnS$_2$: a non-equilibrium Monte-Carlo simulation of Boltzmann transport equation

Thermoelectric Transport Properties of Orthorhombic RbBaX (X = Sb, Bi) with Strong Anharmonicity.

First principles study of the electronic structure of ReSi1.75

Transport Properties and High Thermopower of SnSe2: A Full Ab-Initio Investigation

Giant Seebeck Coefficient Decrease in Polycrystalline Materials with Highly Anisotropic Band Structures: Implications in Seeking High-Quality Thermoelectric Materials

Comparative Study of Thermoelectric Properties of Sb2Si2Te6 and Bi2Si2Te6

Thermoelectric Figure of Merit of a Superatomic Crystal Re6Se8I2 Monolayer

5-2 Heat conduction calculation of thermoelectric materials from first principles

Anisotropic thermoelectric transport properties of Bi0.5Sb1.5Te2.96+x zone melted ingots

Revealing the Origin of Anisotropic Rashba Spin‐Orbital Splitting and Four‐Phonon Scattering in Strontium‐Tin‐Selenium Thermoelectrics

First-principles study of anisotropic thermoelectric transport properties of IV-VI semiconductor compounds SnSe and SnS

Suppression of Intervalley Scattering and Enhanced Phonon Anharmonic Interactions in 2D Bi2TeSe2: Crystal-field Symmetry and Band Convergence

Understanding the Evolution of Anomalous Anharmonicity in Bi2Te3−xSex

Electrostatic Interaction Determines Thermal Conductivity Anisotropy of Bi2O2Se