Abstract:The demand for increased information storage densities has pushed silicon technology to its limits and led to a focus on research on novel materials and device structures, such as magnetoresistive random access memory1,2,3 and carbon nanotube field-effect transistors4,5,6,7,8,9, for ultra-large-scale integrated memory10. Electromechanical devices are suitable for memory applications because of their excellent ‘ON–OFF’ ratios and fast switching characteristics, but they involve larger cells and more complex fabrication processes than silicon-based arrangements11,12,13. Nanoelectromechanical devices based on carbon nanotubes have been reported previously14,15,16,17, but it is still not possible to control the number and spatial location of nanotubes over large areas with the precision needed for the production of integrated circuits. Here we report a novel nanoelectromechanical switched capacitor structure based on vertically aligned multiwalled carbon nanotubes in which the mechanical movement of a nanotube relative to a carbon nanotube based capacitor defines ‘ON’ and ‘OFF’ states. The carbon nanotubes are grown with controlled dimensions at pre-defined locations on a silicon substrate in a process that could be made compatible with existing silicon technology, and the vertical orientation allows for a significant decrease in cell area over conventional devices. We have written data to the structure and it should be possible to read data with standard dynamic random access memory sensing circuitry. Simulations suggest that the use of high-k dielectrics in the capacitors will increase the capacitance to the levels needed for dynamic random access memory applications.

Arrays of Robust Carbon Nanotube-Based NEMS: A Combined Experimental/Computational Investigation

Nanoelectromechanical Switches with Vertically Aligned Carbon Nanotubes

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Fabrication of A Nanoelectromechanical Switch Using A Suspended Carbon Nanotube

Design and Modeling of Carbon Nanotube Electromechanical Switches for Logic Device Application

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Nanoscale Memory Cell Based on a Nanoelectromechanical Switched Capacitor

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Nanoscale force sensor and actuator with carbon-nanotube network

Single electron tunneling through high-Q single-wall carbon nanotube NEMS resonators

Nanobeam Mechanics: Elasticity, Strength, and Toughness of Nanorods and Nanotubes

Scaling Law in Carbon Nanotube Electromechanical Devices

Properties and nanotechnological applications of nanotubes

Force-sensitive Sensor Based on Single-walled Carbon Nanotube Array

Fabrication of Electromechanical Switch Using Interconnected Single-Walled Carbon Nanotubes

Carbon Nanotube Based Nanoelectromechanical Systems