Global simulation of a silicon Czochralski furnace in an axial magnetic field

You-Rong Li,Deng-Fang Ruan,Nobuyuki Imaishi,Shuang-Ying Wu,Lan Peng,Dan-Ling Zeng
DOI: https://doi.org/10.1016/S0017-9310(03)00049-8
IF: 5.2
2003-01-01
International Journal of Heat and Mass Transfer
Abstract:Control of melt flow in crystal growth process by application of the magnetic field is a practical technique for silicon single crystals. In order to understand the influence of axial magnetic field on the silicon melt flow and oxygen transport in a silicon Czochralski (Cz) furnace, a set of global numerical simulations was conducted using the finite-element method for the magnetic field strength from 0 to 0.3 T, the crystal rotation rates from 0 to 30 rpm and the crucible counter-rotation rates from 0 to −15 rpm. It was assumed that the flow was axisymmetric laminar in both the melt and the gas, the melt was incompressible and a constant temperature was imposed on the outer wall of the Cz furnace. The results indicate significantly different flow patterns, thermal and oxygen concentration fields in the melt pool when a uniform axial magnetic field is applied.
What problem does this paper attempt to address?