Abstract:Today's electronics uses electron charge as a state variable for logic and computing operation, which is often represented as voltage or current. In this representation of state variable, carriers in electronic devices behave independently even to a few and single electron cases. As the scaling continues to reduce the physical feature size and to increase the functional throughput, two most outstanding limitations and major challenges, among others, are power dissipation and variability as identified by ITRS. This paper presents the expose, in that collective phenomena, e.g., spintronics using appropriate order parameters of magnetic moment as a state variable may be considered favorably for a new room-temperature information processing paradigm. A comparison between electronics and spintronics in terms of variability, quantum and thermal fluctuations will be presented. It shows that the benefits of the scalability to smaller sizes in the case of spintronics (nanomagnetics) include a much reduced variability problem as compared with today's electronics. In addition, another advantage of using nanomagnets is the possibility of constructing nonvolatile logics, which allow for immense power savings during system standby. However, most of devices with magnetic moment usually use current to drive the devices and consequently, power dissipation is a major issue. We will discuss approaches of using electric-field control of ferromagnetism in dilute magnetic semiconductor (DMS) and metallic ferromagnetic materials. With the DMSs, carrier-mediated transition from paramagnetic to ferromagnetic phases make possible to have devices work very much like field effect transistor, plus the non-volatility afforded by ferromagnetism. Then we will describe new possibilities of the use of electric field for metallic materials and devices: Spin wave devices with multiferroics materials. We will also further describe a potential new method of electric field control of metallic ferromagnetism via field effect of the Thomas Fermi surface layer.

Spin-polarized transport and giant magnetoresistance--a basic physical feature of spintronics

Spin-Dependent Transport at 2D Solids: from Nonmagnetic Layers to Ferromagnetic Van Der Waals Structures.

Spin transport of half-metal Mn2X3 with high Curie temperature: An ideal giant magnetoresistance device from electrical and thermal drives

Perspectives in spintronics: magnetic resonant tunneling, spin-orbit coupling, and GaMnAs

Spintronics, from giant magnetoresistance to magnetic skyrmions and topological insulators

Insulator-to-Metal Transition and Isotropic Gigantic Magnetoresistance in Layered Magnetic Semiconductors

Magnetic MnxGe1-x Dots for Spintronics Applications

Electrically Tunable, Rapid Spin-Orbit Torque Induced Modulation of Colossal Magnetoresistance in Mn_3Si_2Te_6 Nanoflakes

Spin transport across antiferromagnets induced by the spin Seebeck effect

Electric Field Control of Spin Transport

Design Of A Giant Magnetoresistance Device With High Spin Filter Efficiency

Spin Polarization and Giant Magnetoresistance Effect Induced by Magnetization in Zigzag Graphene Nanoribbons

Electron and spin transport in semiconductor and magnetoresistive devices

Two-dimensional magnetic materials for spintronic devices

Field-induced metal-to-insulator transition and colossal anisotropic magnetoresistance in a nearly Dirac material EuMnSb2

Spin-polarized Tunneling Between Ferromagnetic Films

Insulator‐to‐Metal Transition and Isotropic Gigantic Magnetoresistance in Layered Magnetic Semiconductors

Giant Magnetoresistance Induced by Spin-Correlation Scattering in Magnetic Thin Films and Other Compounds

Spin-dependent Thermoelectronic Transport of a Single Molecule Magnet Mn(dmit)2.

Spin transport in magnetic graphene superlattices

From Nanoelectronics to Nano-Spintronics.