Abstract:A derivation of a tight-binding model from Schrödinger formalism for various topologies of position-based semiconductor qubits is presented in the case of static and time-dependent electric fields. The simplistic tight-binding model enables the description of single-electron devices at a large integration scale. The case of two electrostatically Wannier qubits (also known as position-based qubits) in a Schrödinger model is presented with omission of spin degrees of freedom. The concept of programmable quantum matter can be implemented in the chain of coupled semiconductor quantum dots. Highly integrated and developed cryogenic CMOS nanostructures can be mapped to coupled quantum dots, the connectivity of which can be controlled by a voltage applied across the transistor gates as well as using an external magnetic field. Using the anti-correlation principle arising from the Coulomb repulsion interaction between electrons, one can implement classical and quantum inverters (Classical/Quantum Swap Gate) and many other logical gates. The anti-correlation will be weakened due to the fact that the quantumness of the physical process brings about the coexistence of correlation and anti-correlation at the same time. One of the central results presented in this work relies on the appearance of dissipation-like processes and effective potential renormalization building effective barriers in both semiconductors and in superconductors between not bended nanowire regions both in classical and in quantum regimes. The presence of non-straight wire regions is also expressed by the geometrical dissipative quantum Aharonov–Bohm effect in superconductors/semiconductors when one obtains a complex value vector potential-like field. The existence of a Coulomb interaction provides a base for the physical description of an electrostatic Q-Swap gate with any topology using open-loop nanowires, with programmable functionality. We observe strong localization of the wavepacket due to nanowire bending. Therefore, it is not always necessary to build a barrier between two nanowires to obtain two quantum dot systems. On the other hand, the results can be mapped to the problem of an electron in curved space, so they can be expressed with a programmable position-dependent metric embedded in Schrödinger's equation. The semiconductor quantum dot system is capable of mimicking curved space, providing a bridge between fundamental and applied science in the implementation of single-electron devices.

Deep Centers As Atomic-Size Quantum-Dot Electron Turnstiles

Coulomb blockade in an atomically thin quantum dot coupled to a tunable Fermi reservoir

Nonequilibrium Effect in an Electron Turnstile

Preserving Coulomb blockade in transport spectroscopy of quantum dots, by dynamical tunnel-barrier compensation

Double quantum dot turnstile as an electron spin entangler

Theory Of Electronic Properties And Quantum Spin Blockade In A Gated Linear Triple Quantum Dot With One Electron Spin Each

Protection of Center-Spin Coherence by a Dynamically Polarized Nuclear Spin Core

Quantum control and process tomography of a semiconductor quantum dot hybrid qubit

Atomic-scale Control of Tunnel Coupling

Nonadiabatic Electron Manipulation in Quantum-Dot Arrays

Tunable few-electron double quantum dots and Klein tunnelling in ultra-clean carbon nanotubes

Controllable Tunnel Coupling and Molecular States in a Graphene Double Quantum Dot

Heating in Electron Turnstiles and Pumps

Quantum Interference and Coherent Population Trapping in a Double Quantum Dot

Control of Electron Tunnelling by Fine Band Engineering of Semiconductor Potential Barriers.

Coulomb Blockade Oscillations in Silicon Single-electron Transistor with a Strong Gate-dot Coupling

Modelling shallow confinement in tuneable quantum dots

Common-Mode Control and Confinement Inversion of Electrostatically Defined Quantum Dots in a Commercial CMOS Process

Novel Nanotube Multiquantum Dot Devices

Electrostatically Interacting Wannier Qubits in Curved Space

Flux-tunable hybridization in a double quantum dot interferometer