Abstract:We present a comprehensive investigation of non-equilibrium effects and self-heating in single electron transfer devices based primarily on the Coulomb blockade effect. During an electron trapping process, a hot electron maybe deposited in a quantum dot or metal island, with an extra energy usually of the order of the Coulomb charging energy, which is much higher than the temperature in typical experiments. The hot electron may relax through three channels: tunneling back and forth to the feeding lead (or island), emitting phonons, and exciting background electrons. Depending on the magnitudes of the rates in the latter two channels relative to the device operation frequency and to each other, the system may be in one of three different regimes: equilibrium, non-equilibrium, and self-heating (partial equilibrium). In the equilibrium regime, a hot electron fully gives up its energy to phonons within a pump cycle. In the non-equilibrium regime, the relaxation is via tunneling with a distribution of characteristic rates; the approach to equilibrium goes like a power law of time (frequency) instead of an exponential. This channel is plagued completely in the continuum limit of the single-electron levels. In the self-heating regime, the hot electron thermalizes quickly with background electrons, whose temperature Te is elevated above the lattice temperature Tol. We have calculated the coefficient in the well-known T5 law of energy dissipation rate, and compared the results to experimental values for aluminum and copper islands and for a two-dimensional semiconductor quantum dot. Moreover, we have obtained different scaling relations between the electron temperature, the operation frequency and device size for various types of devices.

Heating in Electron Turnstiles and Pumps

Nonequilibrium Effect in an Electron Turnstile

Non-equilibrium Effects and Self-Heating in Single-Electron Coulomb Blockade Devices

Theoretical Study of Self-Heating-Induced Thermal Stress Effects on Quantum Transport in P-Type Ultrathin Body-FinFET by Multiphysics Simulation

Hot electrons in metallic micro/nano-structures

Multiphysics Simulation of Self-Heating-Induced Thermal Stress Effects on Quantum Transport in Gate-All-Around Nanosheet Field Effect Transistors

Heating of a trapped ion induced by dielectric materials

Joule Heating Effects on Electrokinetic Focusing and Trapping of Particles in Constriction Microchannels

Vibrational and electronic heating in nanoscale junctions

Limits to Quantum Gate Fidelity from Near-Field Thermal and Vacuum Fluctuations

Deep Centers As Atomic-Size Quantum-Dot Electron Turnstiles

Measurements of trapped-ion heating rates with exchangeable surfaces in close proximity

Detuning effects for heat-current control in quantum thermal devices

Thermally Stable Peltier Controlled Vacuum Chamber for Electrical Transport Measurements

Thermal control across a chain of electronic nanocavities

Electronic Mechanism that Quenches Field-Driven Heating as Illustrated with the Static Holstein Model

Joule Heating Effects on Transport-Induced-Charge Phenomena in an Ultrathin Nanopore

Interacting Random-field Dipole Defect Model for Heating in Semiconductor-based Qubit Devices

Heat dissipation mechanisms in hybrid superconductor-semiconductor devices revealed by Joule spectroscopy

Unveiling Detuning Effects for Heat-Current Control in Quantum Thermal Devices

Temperature-Stable Tunneling Current in Serial Double Quantum Dots: Insights from Nonequilibrium Green Functions and Pauli Spin Blockade