Abstract:Single-Dirac-cone topological insulators (TI) are the first experimentally discovered class of three dimensional topologically ordered electronic systems, and feature robust, massless spin-helical conducting surface states that appear at any interface between a topological insulator and normal matter that lacks the topological insulator ordering. This topologically defined surface environment has been theoretically identified as a promising platform for observing a wide range of new physical phenomena, and possesses ideal properties for advanced electronics such as spin-polarized conductivity and suppressed scattering. A key missing step in enabling these applications is to understand how topologically ordered electrons respond to the interfaces and surface structures that constitute a device. Here we explore this question by using the surface deposition of cathode (Cu/In/Fe) and anode materials (NO$_2$) and control of bulk doping in Bi$_2$Se$_3$ from P-type to N-type charge transport regimes to generate a range of topological insulator interface scenarios that are fundamental to device development. The interplay of conventional semiconductor junction physics and three dimensional topological electronic order is observed to generate novel junction behaviors that go beyond the doped-insulator paradigm of conventional semiconductor devices and greatly alter the known spin-orbit interface phenomenon of Rashba splitting. Our measurements for the first time reveal new classes of diode-like configurations that can create a gap in the interface electron density near a topological Dirac point and systematically modify the topological surface state Dirac velocity, allowing far reaching control of spin-textured helical Dirac electrons inside the interface and creating advantages for TI superconductors as a Majorana fermion platform over spin-orbit semiconductors.

Observation of Time-Reversal-Protected Single-Dirac-Cone Topological-Insulator States Inbi2te3andsb2te3

Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

Universal gapless Dirac cone and tunable topological states in (MnBi$_2$Te$_4$)$_m$(Bi$_2$Te$_3$)$_n$ heterostructures

Symmetry-Constrained Reorganization Of Dirac Cones In Topological Insulators By Surface Modification

Antiferromagnetic topological insulating state in Tb$_{0.02}$Bi$_{1.08}$Sb$_{0.9}$Te$_2$S single crystals

Realization of Tunable Dirac Cone and Insulating Bulk States in Topological Insulators (Bi1−xsbx)2te3

Electron dynamics in topological insulator based semiconductor-metal interfaces (topological p-n interface based on Bi2Se3 class)

Topological Insulators at Room Temperature

Experimental Observation of Gapped Topological Surface States in Sb-doped MnBi4Te7

Tunable Dirac Fermion Dynamics in Topological Insulators

Quasiparticle Dynamics In Reshaped Helical Dirac Cone Of Topological Insulators

Discovery of a Single Topological Dirac Fermion in the Strong Inversion Asymmetric Compound BiTeCl

Observation of Distinct Bulk and Surface Chemical Environments in a Topological Insulator under Magnetic doping

Topological nature and the multiple Dirac cones hidden in Bismuth high-Tc superconductors

A topological crystalline insulator (TCI) phase via topological phase transition and crystalline mirror symmetry

Weak Anti-localization and Quantum Oscillations of Surface States in Topological Insulator Bi2Se2Te

Observation of Topological Order in the TlBiSe2 Class : Probing The

A computational investigation of topological insulator Bi2Se3 film

Massive Dirac fermions and strong Shubnikov–de Haas oscillations in single crystals of the topological insulator Bi 2 Se 3 doped with Sm and Fe

Single-Dirac-cone Z2 topological insulator phases in distorted Li2AgSb-class and related quantum critical Li-based spin-orbit compounds