Abstract:Grain size and its spatial distribution are the crucial issues in the study of advanced materials with a grain-grain boundary structure. It not only implies the grain growth mechanism of those materials, but also determines most of their macroscopic properties, such as mechanical strength, current conduction, ageing and so on. Therefore, it is of importance to clarify the grain size distribution (GSD) in ZnO-based varistor ceramics, a key protection element against overvoltage. In the present paper, a new approach based on the log-normal distribution was proposed to analyze the variation of GSD along the thickness direction of two commercial ZnO varistors. It is found that GSD follows log-normal distribution rather than commonly used normal distribution. In addition, with the proposed grain size, i.e., averaged log-normal grain size (d LN ) and most probable grain size ( dmax), the variation of GSD along the thickness direction was clearly revealed, which exhibited quite different behavior depending on the samples. With the probability plot, the microscopic uniformity is carefully analyzed and discussed. It is proposed that probability plots can be divided into three regions, representing large grains, grains whose sizes follow the lognormal rule and small grains, respectively. With the proposed method, it is possible to obtain more quantitative information, which is of significance for the further development of ZnO-based varistor ceramics and other advanced materials.

Influences of Twin Boundaries on Microstructural Characteristics of ZnO Varistors Simulated by Voronoi Network

Inhibition Effect of Twins to Grain Growth in ZnO Varistors

Influences of Dopants on the Microstructural Nonuniformity of Zno Varistors

Microstructure Characteristics of ZnO Varistors Simulated by Voronoi Network

Effect Of Nonuniformities Of Microstructure And Electrical Property Of Grain Boundary To The Global Electrical Characteristics

Inhibition Effect Oftwinstograingrowthinznovaristors

Dopant Effects to Pores in ZnO Varistors

Effect of Variations in Grain Size and Grain Boundary Barrier Heights on the Current‐ Voltage Characteristics of ZnO Varistors

Effect Ofnonuniformities Ofmicrostructure Andelectrical Property Ofgrainboundary to Theglobal Electrical Characteristics

Nonuniformity of Electrical Characteristics in Microstructures of Zno Surge Varistors

INFLUENCES OF THE MICROSTRUCTURE ON CURRENT DISTRIBUTION IN ZnO VARISTORS

The Effect of Aluminum on Electrical Properties of ZnO Varistors: Rapid Communications of the American Ceramic Society

Influence of Co2O3 doping on the microstructure and electrical properties of ZnO–Bi2O3-based varistors

Time-Domain Response Simulation of ZnO Varistors by Voronoi Network with an Actual Grain Boundary Model

Nickel Oxide Doping Effects on Electrical Characteristics and Microstructural Phases of ZnO Varistors with Low Residual Voltage Ratio

A Statistical Approach for Effectively Analyzing the Grain Size Distribution along the Thickness Direction in Commercial ZnO-Based Varistor Ceramics

Revisiting the Effects of Co 2 O 3 on Multiscale Defect Structures and Relevant Electrical Properties in ZnO Varistors

Effect of B2O3 Doping on the Microstructure and Electrical Properties of ZnO-Based Varistors

Influence of Rare-Earth Oxide Additives on Electrical Performance of ZnO Varistor

Effects of the Er2O3 doping on the microstructure and electrical properties of ZnO–Bi2O3 based varistor ceramics