INFLUENCES OF THE MICROSTRUCTURE ON CURRENT DISTRIBUTION IN ZnO VARISTORS

陈青恒,何金良,谈克雄,陈水明
DOI: https://doi.org/10.3321/j.issn:0258-8013.2002.08.014
2002-01-01
Abstract:ZnO varistors are key functional element of surge arresters. The nonuniformity of current distribution in microstructure of ZnO varistor leads to the decreasing of its impulse energy absorption capability. In this paper, the microscopic model of ZnO varistors is described by the Voronoi network model and the equation of the I-V characteristics of grain boundaries is proposed, which simulate the effects of the nonuniformity of the grain size and the variety of the I-V characteristics of grain junction on the distribution of current in ZnO varistor ceramics. The simulation result shows that the current distribution is closely related to the voltage gradient applied on the varistor, and concentrated on a few paths especially on breakdown region. The result also shows that both the nonuniformity of grain size and the variety of the I-V characteristics of single grain junction contribute to the current concentration phenomenon in ZnO varistor. However, the nonuniformity of grain size plays a more important role in the current localization in ZnO varistor within breakdown region.
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