Abstract:Quantum computers require interfaces with classical electronics for efficient qubit control, measurement and fast data processing. Fabricating the qubit and the classical control layer using the same technology is appealing because it will facilitate the integration process, improving feedback speeds and offer potential solutions to wiring and layout challenges. Integrating classical and quantum devices monolithically, using complementary metal-oxide-transistor (CMOS) processes, enables the processor to profit from the most mature industrial technology for the fabrication of large scale circuits. Here we demonstrate the integration of a single-electron charge storage CMOS quantum dot with a CMOS transistor for control of the readout via gate-based dispersive sensing using a lumped element $LC$ resonator. The control field-effect transistor (FET) and quantum dot are fabricated on the same chip using fully-depleted silicon-on-insulator technology. We obtain a charge sensitivity of $\delta q=165\, \mu e \mathrm{Hz}^{-1/2}$ when the quantum dot readout is enabled by the control FET. Additionally, we observe a single-electron retention time of the order of a second when storing a single-electron charge on the quantum dot at milli-Kelvin temperatures. These results demonstrate first steps towards time-based multiplexing of gate-based dispersive qubit readout in CMOS technology opening the path for the development of an all-silicon quantum-classical processor.

Single-Electron Logic Based On Capacitively Coupled Double Quantum Dots

Controlled-Not Quantum Logic Gate in Two Strongly Coupled Semiconductor Charge Qubits

Tunable Capacitive Coupling Between Two Semiconductor Charge Qubits

Single-electron operation of a silicon-CMOS 2x2 quantum dot array with integrated charge sensing

A two-qubit logic gate in silicon

Stable Universal 1‐ and 2‐Input Single‐Molecule Logic Gates

Quantum Circuits Based on Coded Qubits Encoded in Chirality of Electron Spin Complexes in Triple Quantum Dots

Quantum gates by coupled asymmetric quantum dots and controlled-NOT-gate operation

Quantum dots with split enhancement gate tunnel barrier control

Coulomb Blockade Oscillations in Silicon Single-electron Transistor with a Strong Gate-dot Coupling

Double quantum dot with tunable coupling in an enhancement-mode silicon metal-oxide semiconductor device with lateral geometry

Coupled vertical double quantum dots at single-hole occupancy

Conditional Rotation of Two Strongly Coupled Semiconductor Charge Qubits

Topologically Protected Quantum Logic Gates with Valley-Hall Photonic Crystals

Complementary Quantum Logic Family Using Josephson Junctions and Quantum Phase-Slip Junctions

Conditional dispersive readout of a CMOS quantum dot via an integrated transistor circuit

Silicon Single Electron Transistors Aiming at a High Gate Modulation Factor

Simulation of A Triple-Gate Single Electron Fet Memory with A Quantum Dot Floating Gate and A Quantum Wire Channel

Gate-Capacitance-Shift Approach and Compact Modeling for Quantum Mechanical Effects in Poly-Gates

Modeling and manufacturability assessment of bistable quantum-dot cells