Enhancement of Adatom Incidence on Formation of Misfit Dislocations in Epitaxial Aluminum Films

HUANG Jun,ZHOU Nai-gen,ZHOU Lang

DOI: https://doi.org/10.3969/j.issn.1006-0464.2008.01.011

2008-01-01

Abstract:A molecular dynamics simulation of the enhancement of adatom incidence of formation of misfit dislocations in epitaxial aluminum films has been carried out.An embedded atom method(EAM) potential is used to calculate the interaction of aluminum atoms.The results show that: when the thickness of aluminum film with-6% mismatch is 15 atomic layers,adatom incidence could induce the formation of misfit?dislocation at 600K.However,different incident positions have different effect.The effect of the FCC positions and HCP positions is more than that of the top of surface atoms;Furthermore,when the adatom incidents on the top of the middle point of two adjacent surface atoms,the misfit dislocation can't format.The nucleation of misfit dislocations begins with a squeeze-out group of atoms,and the structure of them is an inverse mini-tetrahedron.When the incident positions are FCC or HCP positions,the undersurfaces of the mini-tetrahedrons will parallel to the surface of epitaxial film.And when the incident position is on the top of the middle point of two adjacent surface atoms,the undersurface of the mini-tetrahedron will cross the surface.