Simulation of Retention Characteristics for Metal Nanocrystal Nonvolatile Memory with a Modified Direct Tunneling Model
Yingtao Li,Ming Liu,Shibing Long,Qin Wang,Qi Liu,Sen Zhang,Yan Wang,Qingyun Zuo,Su Liu
DOI: https://doi.org/10.1149/1.3096442
2009-01-01
ECS Transactions
Abstract:By comparing the impacts of Coulomb blockade effect and quantum confinement effect on the energy band shift of metal nanocrystal, it is obvious that not only quantum confinement effect but Coulomb blockade effect could influence the energy band shift of metal nanocrystal. Taking into consideration these two effects, a modified direct tunneling model and numerical calculations is proposed for describing the retention characteristics of metal nanocrystal nonvolatile memories completely. The simulation results which compare well with experimental data show that the retention characteristics are not only dependent on tunneling dielectric thickness, but significantly relational to the barrier height, dielectric constant, as well as the nanocrystal coverage ratio.