Organic Semiconductor Devices for X-ray Imaging

J. C. Blakesley,P. E. Keivanidis,M. Campoy-Quiles,C. R. Newman,Y. Jin,R. Speller,H. Sirringhaus,N. C. Greenham,J. Nelson,P. Stavrinou
DOI: https://doi.org/10.1016/j.nima.2007.05.105
IF: 1.335
2007-01-01
Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment
Abstract:We investigate the potential for replacing inorganic semiconductors with polymeric semiconductors in medical X-ray imaging applications. Polymeric semiconductors are soft and can be fabricated using techniques such as spin coating and jet printing, leading to reductions in fabrication costs for large-area arrays, easy integration of heterostructures and composite materials and the possibility of using flexible substrates. By using a combined cascaded linear systems and Monte-Carlo model to simulate the imaging system, we establish a set of semiconductor requirements for a feasible flat-panel imager (FPI).We have fabricated photodiodes and thin-film transistors (TFTs) out of a variety of polymer materials. Polymer photodiodes coupled to phosphor screens have shown a response to X-ray radiation with a good efficiency. Both transistors and photodiodes were sufficiently radiation hard for use in clinical imaging conditions. A composite phosphor polymer material has been fabricated and has been found to be compatible with polymeric photodiodes. The composite material can be fabricated within a structure as part of the semiconductor fabrication process. (C) 2007 Elsevier B.V. All rights reserved.
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