Nonvolatile Ternary Resistive Memory Performance of a Benzothiadiazole-Based Donor–Acceptor Material on ITO-Coated Glass
Yang Li,Cheng Zhang,Zhiming Shi,Jingni Li,Qingyun Qian,Songtao Ling,Yufen Zhang,Xiaolin Zhu,Xingzhi Wu,Jinlei Zhang,Run Zhao,Yucheng Jiang,Qijian Zhang,Chunlan Ma
DOI: https://doi.org/10.3390/coatings11030318
IF: 3.236
2021-03-10
Coatings
Abstract:The explosive growth of data and information has increasingly motivated scientific and technological endeavors toward ultra-high-density data storage (UHDDS) applications. Herein, a donor−acceptor (D–A) type small conjugated molecule containing benzothiadiazole (BT) is prepared (NIBTCN), which demonstrates multilevel resistive memory behavior and holds considerable promise for implementing the target of UHDDS. The as-prepared device presents distinct current ratios of 105.2/103.2/1, low threshold voltages of −1.90 V and −3.85 V, and satisfactory reproducibility beyond 60%, which suggests reliable device performance. This work represents a favorable step toward further development of highly-efficient D–A molecular systems, which opens more opportunities for achieving high performance multilevel memory materials and devices.
materials science, multidisciplinary,physics, applied, coatings & films