Effects of SiO2 Doping on the Microstructure and Dielectric Properties of BST-MgO Ceramics

WANG Xiaohong,SHI Xiao,HE Jianping,L(U) Wenzhong

DOI: https://doi.org/10.3969/j.issn.1001-2028.2011.04.004

2011-01-01

Abstract:0.4Ba0.6Sr0.4TiO3-0.6MgO-xSiO2(0≤x≤5.0%)ceramics were prepared by conventional ceramic preparation technique.The effects of SiO2 content on the microstructure and dielectric properties(at low and microwave frequency) of BST-MgO(BSTM) ceramics were investigated.The results of XRD analysis show that SiO2 transforms from SiO2 to Mg2SiO4 in BSTM ceramics with increasing SiO2 content.Doping 0.5%(mass fraction) SiO2 increases the density,improves the tenability and reduces the microwave loss of BSTM ceramics.The tunability and Q?f of BSTM ceramics with 0.5% SiO2 is found to be 16.21% and 109.5 GHz,respectively.With SiO2 content increasing further,the tunability of BSTM ceramics increases,the ?r decreases,while the Q?f decreases first and then increases.When 3%(mass fraction) SiO2 is doped,the tunability of BSTM ceramics reaches 17.6% while its Q·f is 89 GHz.