Abstract:4H silicon carbide (SiC) polytype is preferred over other SiC polytypes for high-power, high-voltage, and high-frequency applications due to its superior electrical, thermal, and structural characteristics. In this manuscript, we provide a comprehensive study of the spin coupling dynamic between conduction electrons and nitrogen (N) donors in monocrystalline 4H SiC with various concentrations of uncompensated N donors from 10^17 cm^-3 to 5x10^19 cm^-3 by continuous wave, pulsed EPR, and microwave perturbation techniques at T=4.2-300 K. At low temperatures two triplets due to N donors in cubic (Nk) hexagonal (Nh) positions and triplet arisen from spin-interaction between Nh and Nk were observed in 4H SiC having Nd-Na=10^17 cm^-3. A single S-line (S=1/2) dominates the EPR spectra in all investigated 4H SiC monocrystals at high temperatures. It was established that this line occurs due to the exchange coupling of localized electrons (dominate at low temperatures) and non-localized electrons (dominate at high temperatures). The localized electrons were attributed to Nh for Nd-Na=10^17 cm^-3 and Nk donors for Nd-Na>=5x10^18 cm^-3. We have concluded that the conduction electrons in 4H SiC monocrystals are characterized by gpar=2.0053(3) gper=2.0011(3) for Nd-Na<=5x10^18 cm^-3 and gpar=2.0057(3) and gper=2.0019(3) for Nd-Na=5x10^19 cm^-3. Using the theoretical fitting of the temperature variation of S-line EPR linewidth in 4H SiC having Nd-Na<5x10^18 cm-^3, the energy levels of 57-65 meV that correlate with the valley-orbit splitting values for Nk donors in 4H SiC monocrystals were obtained.

Infrared Absorption Spectra of 4h Silicon Carbide

Nmr Spin Lattice Relaxation in Nitrogen-Doped 6h Silicon Carbide

Photothermal Ionization Spectroscopy of Shallow Nitrogen Donor States in 4H-Sic

Zeeman Spectroscopy of Shallow Nitrogen Donor in 3C-Sic

Temperature-dependent Infrared Optical Properties of 3C-, 4H- and 6H-Sic

3C-, 4H- and 6H-SiC bulks studied by silicon k-edge X-ray absorption

Temperature dependence of the AB-lines and Optical Properties of the Carbon-Antisite Vacancy Pair in 4H-SiC

Temperature dependence of Raman scattering in bulk 4H-SiC with different carrier concentration

Resonance enhancement of electronic Raman scattering from nitrogen defect levels in silicon carbide

Spin exchange dynamics in 4H SiC monocrystals with different nitrogen donor concentrations

Study on the infrared absorption of nitrogen-oxygen complex in silicon

Temperature and Doping Dependence of the Raman Scattering in 4H-Sic

Dielectric and infrared properties of silicon carbide nanopowders

Infrared Absorption of Nitrogen–oxygen Complex in Silicon

Theoretical study on the band structure and optical properties of 4H-SiC

Infrared spectroscopy of silicon for applications in astronomy

Electronic Raman Scattering and the Second-Order Raman Spectra of the N-Type SiC

High-Resolution Infrared Spectrum of H3SiI in the Ν1/ν4region Near 2200 Cm−1

Anisotropic Thermal Conductivity of 4H and 6H Silicon Carbide Measured Using Time-Domain Thermoreflectance

Free electron density and mobility in high-quality 4H–SiC

Theoretical absorption spectra of silicon carbide nanocrystals