Abstract:Rotationally resolved spectra of the H3Σu--X3Σg- electronic transition bands of Si2 have been experimentally studied using laser-induced fluorescence in the 380-520 nm range. Si2 molecules are produced in a supersonically expanding planar plasma by discharging a silane/argon gas mixture. In total, 44 bands belonging to the H3Σu--X3Σg- electronic transition system of the most abundant isotopologue 28Si2 are experimentally recorded. With a spectral resolution of ∼0.04 cm-1, the triplet spin-splitting structures in individual rotational transition lines are fully resolved. Detailed analyses on the high-resolution spectra have yielded an accurate determination of spectroscopic constants for both X3Σg- and H3Σu- states. The spin-spin interaction constants for the two triplet states are found to be comparable (λ ≈1.5 cm-1), which may originate from the 3p atomic orbital interaction in the triplet Si2 molecule. The measured isotopologue spectra of 29Si28Si and 30Si28Si indicate that the H3Σu--X3Σg- transition system of 29S28S and 30S28S can be reasonably reproduced by the isotope mass-scaling rule. Spectroscopic parameters, including the Franck-Condon factors, the Einstein coefficients, and the oscillator strengths, are also determined from the experimental results and the Rydberg-Klein-Rees (RKR) calculations. The agreement between the experimentally measured and calculated dispersed fluorescence spectra indicates that the RKR calculations with the molecular constants determined in this work can accurately reproduce the diatomic potentials of both states. These molecular data provide a benchmark in high-level theoretical studies on Si2 and likely other small silicon clusters.

High-Resolution Infrared Spectrum of H3SiI in the Ν1/ν4region Near 2200 Cm−1

Infrared Absorption Properties of Si— O —Si Bonds in Plasma-deposited Amorphous SiOx∶H Films

A study of plasma-deposited amorphous SiOx:H (0⩽x⩽2.0) films using infrared spectroscopy

High-resolution Spectroscopy of Ν3 and Ν1 + Ν3 Bands of SiD4

Infrared and ab initio studies of compounds containing SiH bonds: Vibration-internal rotation spectra and silyl group geometry in PhSiHD2

A high resolution spectroscopic study of SiH4 ν = 6 and 7 overtones

High-Resolution Laser Spectroscopic Survey of the H3Σu--X3Σg- Electronic Transition of Si2.

The Vibrational Overtones of Sih4 Isotopomers: Experimental Wavenumbers, Assignment, Ab Initio Dipole Moment Surfaces and Intensities

High-resolution Spectroscopic Study of the (2000) Stretching Vibrational Band and Vibrational Dependence of Rotational Constants of Silane

Infrared and ab initio studies of molecules containing SiH bondsPart I. A correlation between vis(SiH) and re (SiH)

The Infrared Spectra of Diiodosilane

Infrared and Ab Initio Studies of Molecules Containing SiH Bonds

High-Resolution Fourier Transform Spectrum Of H2s In The Region Of 8500-8900 Cm(-1)

The (3000), (4000) and (5000) Stretching Overtone Bands of Silane—i. the Effect of Local-Mode Vibration on Rotational Constants

A ROTATIONAL ANALYSIS OF UV MULTIPHOTON IONIZATION SPECTRUM OF SiH4

Infrared Spectra of the Novel Si2h2 and Si2h4 Species and the Sih1,2,3 Intermediates in Solid Neon, Argon, and Deuterium

Sih2cl2: Ab Initio Anharmonic Force Field, Dipole Moments, And Infrared Vibrational Transitions

High-resolution spectroscopy of the 0<sub>0</sub><SUP>0</SUP>, 2<sub>0</sub><SUP>1</SUP>; 3<sub>0</sub><SUP>1</SUP> and 3<sub>1</sub><SUP>1</SUP> bands in the <i>A</i> <SUP>1</SUP>B<sub>2</sub> - (X)over-tilde <SUP>1</SUP><i>A</i><sub>1</sub> transition of SiC<sub>2</sub>

Accurate frequency determination of vibration-rotation and rotational transitions of SiH+

Density Functional Theory Study on Fundamental Vibrational Spectra of Disilyl Iodide and Its Isotopomer.

Infrared Spectra of Silicon Nanowires