Abstract:The front-end electronics (FEE) of the Compact Muon Solenoid (CMS) is needed very low power consumption and higher readout bandwidth to match the low power requirement of its Short Strip application-specific integrated circuits (ASIC) (SSA) and to handle a large number of pileup events in the High-Luminosity Large Hadron Collider (LHC). A low-noise, wide bandwidth, and ultra-low power FEE for the pixel-strip sensor of the CMS has been designed and simulated in a 0.35 µm Complementary Metal Oxide Semiconductor (CMOS) process. The design comprises a Charge Sensitive Amplifier (CSA) and a fast Capacitor-Resistor-Resistor-Capacitor (CR-RC) pulse shaper (PS). A compact structure of the CSA circuit has been analyzed and designed for high throughput purposes. Analytical calculations were performed to achieve at least 998 MHz gain bandwidth, and then overcome pileup issue in the High-Luminosity LHC. The spice simulations prove that the circuit can achieve 88 dB dc-gain while exhibiting up to 1 GHz gain-bandwidth product (GBP). The stability of the design was guaranteed with an 82-degree phase margin while 214 ns optimal shaping time was extracted for low-power purposes. The robustness of the design against radiations was performed and the amplitude resolution of the proposed front-end was controlled at 1.87% FWHM (full width half maximum). The circuit has been designed to handle up to 280 fC input charge pulses with 2 pF maximum sensor capacitance. In good agreement with the analytical calculations, simulations outcomes were validated by post-layout simulations results, which provided a baseline gain of 546.56 mV/MeV and 920.66 mV/MeV, respectively, for the CSA and the shaping module while the ENC (Equivalent Noise Charge) of the device was controlled at 37.6 e- at 0 pF with a noise slope of 16.32 e-/pF. Moreover, the proposed circuit dissipates very low power which is only 8.72 µW from a 3.3 V supply and the compact layout occupied just 0.0205 mm2 die area.

A low-noise and low-area-consumption power management dedicated to CMOS pixel sensors for high energy physics experiments

A High Load Current, Low-Noise, Area-Efficient, Full On-Chip Regulator for Cmos Pixel Sensors

A Reconfigurable Convolution-in-Pixel CMOS Image Sensor Architecture

A 200 Ma Low-Area, Low-Noise, Low-Dropout Linear Regulator for Monolithic Active Pixel Sensors

A high speed, low power consumption LVDS interface for CMOS pixel sensors

Design of a Pixel Readout ASIC Using Super Pixel Circuits with a Built-in LDO Regulator for Hybrid X-ray Imaging Detectors

A Simulation System and Its Applications for Signal Readout of CMOS Pixel Sensors in High Energy Physics Experiments

Research and Design of Built-in Power Block for CMOS Image Sensors

Design of a Low-Power Front-End Readout ASIC Based on Energy-Efficient Amplifiers, Featured 126 e-(rms), 0.6 mW/Channel for Si-PIN Detectors

A Low Power Dissipation High-Speed CMOS Image Sensor with Column-Parallel Sigma-Delta ADCs

Low-power In-pixel Computing with Current-modulated Switched Capacitors

A Low Noise Reference Generator in Monolithic Active Pixel Sensors for Star

A Self-Triggered Column-Level ADC for CMOS Pixel Sensors in High Energy Physics

An 8.72 µW Low-Noise and Wide Bandwidth FEE Design for High-Throughput Pixel-Strip (PS) Sensors

A low-power conditional analog correlated multiple sampling circuit for low-noise CMOS image sensor

Improvement to the signaling interface for CMOS pixel sensors

Charge collection and non-ionizing radiation tolerance of CMOS pixel sensors using a 0.18 μm CMOS process

Low-voltage 96 dB snapshot CMOS image sensor with 4.5 nW power dissipation per pixel

A low power CMOS image sensor design for wireless endoscopy capsule

Low Power High Efficiency CMOS Image Sensor Design Based on Compressed Sensing

Power Management in a Wireless Sensorfor Structural Monitoring Application