Abstract:As one of the most representative features to characterize the spin valve structure, magnetoresistance is an important method to study the interlayer coupling in multilayers. Considering the induced magnetism of rare earth at room temperature due to the coupling and magnetic proximity effect in the structure of rare earth/magnetic transition metal, an intermediate nonmagnetic metal can be inserted to form the spin valve structure to regulate the interlayer coupling, which expands the application of rare earth in spintronics. In this paper, the interlayer exchange coupling and interfacial effects of Gd(4 nm)/Cr(tCr)/FeCo(5 nm) trilayers with different Cr layer thicknesses (tCr) are studied by means of in plane magnetoresistance. Compared with FeCo film, more obvious anisotropic magnetoresistance is obtained in Gd/FeCo film. While the magnetoresistance obtained with the configuration of I⊥H shows a minimum value at the peak with the inserting of Cr layer, and this minimum value becomes more obvious with the increase of tCr. When tCr=3 nm, the negative spin valve effect almost totally overcome the anisotropic-magnetoresistance effect. Different spin asymmetry of scattering is formed of FeCo layer and Cr/Gd layers that produce the negative spin valve magnetoresistance, in which the resistance becomes smaller near the coercive, while the resistance becomes larger at high field (parallel alignment of magnetic moments). The oscillation of magnetoresistance with tCr at I//H and the hysteresis loops at 5 K further confirm the existence of interlayer coupling both at room temperature and 5 K.

Change of coercivity of magnetic thin films with non-magnetic layers and applications to spin valve

Manipulating the interlayer exchange coupling in CoFeB/Ta/CoFeB multilayered spin valve for magnonic applications

Influence of Cr interlayer with different thickness on transition of magnetoresistance effect of Gd/FeCo thin films

Improving exchange-coupling field in the same thickness of pinned magnetic layer

Optimization of Ta Buffer Layer in IrMn Top Spinvalve

Influence of the thicknesses of Cr interlayer on the transition of magnetoresistance effect of Gd/FeCo thin films

Study on influence factors of GMR effect in NiO/NiFeCo/Cu/NiFeCo spin-valves

Enhanced Difference in Switching Fields for Perpendicular Magnetic Spin Valves with A Composite [co/ni](n)/tbco Reference Layer

Bulk Defects Induced Coercivity Modulation of Co Thin Film Based on a Ta/Bi Double Buffer Layer

Influence of inserted Co layer on GMR effects of NiFe/Co/Cu/Co

Study of [Co/ni](n)/[co/pt](n)-Based Spin Valves with Perpendicular Magnetic Anisotropy

Reversal of the Pinning Direction in the Synthetic Spin Valve with a NiFeCr Seed Layer

Role of Tbfe on Perpendicular Magnetic Anisotropy and Giant Magnetoresistance Effect in [Co/ni](n)-Based Spin Valves

Spin-dependent Scattering in CoFe/Cu/NiFe Spin Valve Trilayers

Spin-Transfer Effect and Independence of Coercivity and Exchange Bias in A Layered Ferromagnet/Antiferromagnet System

Effects of Layer Deposition Sequence on Microstructure and Magnetostatic Coupling of Spin-Valves with Amorphous Conbzr Layer

Giant Magnetoresistive Spin Valves with A Strong Exchange Bias Field and A Weak Interlayer Coupling Field

Buffer Layer Effects on the Structure and Morphology of Smco/Cu Thin Films

Segregation Of The Cu Atom At The Ferromagnetic/Antiferromagnetic Interlayer In Spin-Valve Structures

Research on the Giant Magnetoresistance Effect of Spin Valve with NiFe/CoFe Composite Free Layer

Improvement of Magnetoresistive Character of NiO/NiFeCo/Cu/NiFeCo Exchange-Biased Spin-Valves Through Annealing in Magnetic Field