Abstract:The electrical properties of GaN epilayers grown by metal-organic chemical vapour deposition adopting the indium-surfactant method have been investigated by means of Hall measurement, photoluminescence and monoenergetic positron annihilation spectroscopy. The background electron concentration in GaN exhibits a minimum of 5.21 x 10(16) cm(-3) for a trimethylindium (TMIn) flow of 20 mu mol min(-1). The decrease in electron concentration with increasing TMIn flow is likely related to an increase in the density of complex defects involving Ga vacancy (V(Ga)), compensating the electrons. We speculate that the increase in electron concentration at high TMIn flow is caused by the formation of N vacancies (V(N)), acting as shallow donors. Competition between the two mechanisms may determine the variation of electron concentration with increasing TMIn flow. A downward trend in electron mobility with increasing TMIn flow is also observed, which likely results from an increase in concentration of complex defects involving V(Ga) and V(N).

ChemInform Abstract: Synthesis of N‐Deficient GaN and Its Enhanced Dielectric Responses.

ChemInform Abstract: Germanium Thin Film Formation by Low‐Pressure Chemical Vapor Deposition.

ChemInform Abstract: One‐Dimensional Nanostructures of Silicon: Synthesis, Characterization and Applications

ChemInform Abstract: Reactions of Laser‐Ablated Ga, In, and Tl Atoms with Nitrogen Atoms and Molecules. Infrared Spectra and Density Functional Calculations of GaN, NGaN, NInN, and the M3N and MN3 Molecules.

ChemInform Abstract: Direct Syntheses of Lan+1NinO3n+1Phases (n = 1, 2, 3 and ∞) from Nanosized Co-Crystallites.

ChemInform Abstract: Green Chemical Approaches Toward High‐Quality Semiconductor Nanocrystals

ChemInform Abstract: Syntheses, Crystal and Band Structures, and Magnetic and Optical Properties of New CsLnCdTe3 (ln: La, Pr, Nd, Sm, Gd—Tm, and Lu).

The Influence of Indium Surfactant on the Electrical Properties of GaN Epilayers Grown by Metal-Organic Chemical Vapour Deposition

ChemInform Abstract: Semiconducting Non‐Molecular Nitrogen Up to 240 GPa and Its Low‐Pressure Stability.

ChemInform Abstract: Solution‐Phase Synthesis of One‐Dimensional Semiconductor Nanostructures

ChemInform Abstract: Ordered Mesoporous Silica‐Based Inorganic Nanocomposites

ChemInform Abstract: Plasmonic Cu2‐xS Nanocrystals: Optical and Structural Properties of Copper‐Deficient Copper(I) Sulfides.

ChemInform Abstract: One‐dimensional (1D) ZnS Nanomaterials and Nanostructures

ChemInform Abstract: Sol—Gel Fabrication and Electrical Property of Nanocrystalline (ln2o3)0.08(zro2)0.92 (ln: Sc, Y) Thin Films.

ChemInform Abstract: A Low Temperature Nitridation Route for Nanocrystalline AlN.

ChemInform Abstract: Synthesis and Magnetic Properties of YFe10Si2Zx (Z: H and N).

Atomistic Origins of Various Luminescent Centers and n-Type Conductivity in GaN: Exploring the Point Defects Induced by Cr, Mn, and O through an Ab Initio Thermodynamic Approach

ChemInform Abstract: Mild Benzene‐Thermal Route to GaP Nanorods and Nanospheres.

ChemInform Abstract: an Improved Synthesis of the Dinucleotides Pdcpa and Pdcpda.

ChemInform Abstract: Synthesis of Large Areas of Highly Oriented, Very Long Silicon Nanowires.

ChemInform Abstract: Structural and Magnetic Properties of Nitride Compounds of the Type Ln2Fe17Nx, Ln2Fe14BNx, and LnTiFe11Nx