Abstract:The spin filtering effect, distinct decaying lengths experienced by oppositely spin-polarized electrons in a magnetic barrier, generally occurs in ferromagnetic (FM) insulators or semiconductors. With the rise of altermagnetic (ALM) materials which exhibit similar capability of spin-polarizing electrons with ferromagnets, it is a nature question whether the ALM insulators or semiconductors can also act as unique barriers for the spin splitting effect. Here, through first-principles calculations, we investigated the complex band structure of the ALM insulator FeF$_2$ and found that it possesses an anisotropic spin filtering effect: along the [001] direction of FeF$_2$, a current remains spin-neutral but has locally nonvanishing spin polarizations in the momentum space; moreover, along the [110] direction of FeF$_2$, a current will be globally spin-polarized by different attenuation lengths of oppositely spin-polarized electrons. Leveraging this anisotropic spin filtering effect, we designed two types of MTJs with the ALM barrier: ALM electrode/ALM insulator barrier/non-magnetic (NM) electrode and FM electrode/ALM insulator barrier/NM electrode, using RuO$_2$(001)/FeF$_2$/IrO$_2$ and CrO$_2$(110)/FeF$_2$/IrO$_2$ as the corresponding prototypes, respectively. We found that these two proposed MTJs exhibited the tunneling magnetoresistance (TMR) ratios of 216\% and 3956\%, by matching the conduction channels of the electrodes and the spin-resolved lowest decay rate of the barrier in the momentum space. Our work deepens and generalizes understanding toward the spin filtering effect for the rising ALM insulators and semiconductors, and broadens applications of the AFM spintronics.

Electrically Controllable Spin Filtering and Switching in Multiferroic Tunneling Junctions

Electrical switching of spin-polarized current in multiferroic tunneling junctions

Magneto-ionic control of spin polarization in multiferroic tunnel junctions

Electric-field Control of Electromagnon Propagation and Spin-Wave Injection in a Spiral Multiferroic/ferromagnet Composite

Spin Filtering Through Multi- -Magnetic-barrier Structures

Electromagnon Excitations in Canted-Spin Multiferroics

Spin-Filtering Ferroelectric Tunnel Junctions as Multiferroic Synapses for Neuromorphic Computing

Spin-filtering Junctions with Double Ferroelectric Barriers

Switchable Spin Filters in Magnetic Molecular Junctions Based on Quantum Interference

Four-state Non-Volatile Memory in a Multiferroic Spin Filter Tunnel Junction

Giant Nonvolatile Manipulation of Magnetoresistance in Magnetic Tunnel Junctions by Electric Fields Via Magnetoelectric Coupling

Electric‐Field Control of Propagating Spin Waves by Ferroelectric Domain‐Wall Motion in a Multiferroic Heterostructure

All-Electric-Controlled Spin Current Switching in Single-Molecule Magnet-Tunnel Junctions

Electric-field-induced Magnetization Reversal in a Ferromagnet-Multiferroic Heterostructure.

Ferroelectricity controlled chiral spin textures and anomalous valley Hall effect in the Janus magnet-based multiferroic heterostructure

Electric Field Driven Magnetic Switching in Nanoscale Multiferroic Heterostructures

Anisotropic spin filtering by an altermagnetic barrier in magnetic tunnel junctions

2D Multiferroicity with Ferroelectric Switching Induced Spin-Constrained Photoelectricity

Computational study on ferroelectric control over spin polarization in the bipolar magnetic semiconductor

Electric Field Control of Spin Transport

Electric-Field Control of the Interlayer Exchange Coupling for Magnetization Switching