The Interfacial Characteristics of Ba0.6Sr0.4TiO3 Films Deposited by Radio Frequency Magnetron Sputtering

J. X. Liao,C. R. Yang,J. H. Zhang,H. W. Chen,C. L. Fu,W. J. Leng
DOI: https://doi.org/10.4028/www.scientific.net/kem.336-338.374
2007-01-01
Key Engineering Materials
Abstract:Ba0.6Sr0.4TiO3 (BST) thin films deposited on Pt/Ti/SiO2/Si substrates by radio frequency magnetron sputtering and crystallized by rapid thermal annealing (RTA) exhibit much thinner BST/Pt interfacial transition layer and higher dielectric properties than the films crystallized by conventional thermal annealing (CTA). HRTEM observations show that the transition layer is 2-3nm thick for RTA and 4-5nm thick for CTA. XPS investigations display that the transition layer is composed of perovskited BST phase and non-perovskited BST phase, and RTA corresponds to much less non-perovskited BST phase than CTA. The reason for non-perovskited BST phase and the dielectric properties of BST films are also presented.
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