Abstract:Highly (117)-preferred Bi3.15Nd0.85Ti2.99Mn0.01O12 (BNTM) thin films with a Bi4Ti3O12 (BTO) seeding layer were fabricated on Pt(111)/Ti/SiO2/Si(100) substrates by using a sol-gel method. The effects of the Bi4Ti3O12 (BTO) seeding layer under different annealing temperatures ranging from 550 to 700 degrees C on the structural and electrical properties of BNTM were investigated. X-ray diffraction results indicated that the BNTM thin films with a BTO layer processed with the annealing temperature of 600 degrees C exhibited the highest (117) orientation at a degree of 97.33%. This typical BNTM film also had the largest remanent polarization (2P(r) = 114.5 mu C cm(-2)), dielectric constant (epsilon(r) = 614.9) and dielectric tunability (16.9%) as compared to the BNTM thin films without a seeding layer or with the BTO layer processed at a different temperature. It is also found that the significant enhancement of the piezoelectric properties was achieved in these typical BNTM thin films. Additionally, the BNTM thin films with BTO seeding layers displayed better fatigue properties, degraded by only 1.1% after 10(9) pulse cycles as compared to 30.2% for those without seeding layers. The mechanism of the temperature dependence of BTO seeding layer on the properties of BNTM will be discussed.

The Effect of A-Site La and Nd Substitution on the Residual Stress of Bi4ti3o12 Thin Films Fabricated by Sol-Gel Method

The Ferroelectric Properties and Residual Stress Analysis of Bi3.15nd0.85ti3o12 Thin Films with A Lanio3 Buffer Layer

Ferroelectric Properties Of La And Zr Substituted Bi4ti3o12 Thin Films

Stress Impact in Nd Doped Bi4Ti3O12 Thin Films

Stress Effects on Ferroelectric and Fatigue Properties of Nd- and La-doped Bi4Ti3O12 Thin Films

Enhanced piezoelectricity and reduced leakage current of a novel (1-<i>x</i>)Bi<sub>0.5</sub>Na<sub>0.5</sub>TiO<sub>3</sub>-<i>x</i>(Sr< sub>0.7</sub>Bi<sub>0.2</sub><sub>0.1</sub>)TiO<sub>3</sub> thin film

Ferroelectric properties of Bi 3 . 25 La 0 . 75 Ti 3 O 12 thin films grown on the highly oriented LaNiO 3 buffered Pt Õ Ti Õ SiO 2 Õ Si substrates

The Effect Of Stress On The Dielectric And Tunable Properties Of Barium Stannate Titanate Thin Films

Effect of Residual Stress on the Ferroelectric Property of (pb0.90la0.10)ti0.975o3 Thin Films

Coeffect Of Size And Stress In Bi3.25la0.75ti3o12 Thin Films

Thermodynamic Analysis Of Stress Effect On Bi4ti3o12 Films

The Effect of Stress on the Piezoelectric Properties of BNT–BT–ST Thin Films

Improvement of Nucleation and Electrical Properties of Bi 3.15 Nd 0.85 Ti 2.99 Mn 0.01 O 12 Thin Films with an Upper Bi 4 Ti 3 O 12 Buffer Layer

Effect of La Doping on Ferroelectric Properties of Bi4ti3o12 Thin Film

Stress Effects on Bi3.25la0.75ti3o12 Thin Films

Stress Impact on Dielectric Properties of Bi3.15Nd0.85Ti3O12 Films

Composition-Dependent Electrical Characteristics And Interface Microstructures Of Solution-Derived Nd-Substituted Bi4ti3o12 Thin Films On Pt Electrodes

Mechanical Stress Effect on Leakage Current in Bi3.25La0.75Ti3O12 Thin Films

FERROELECTRIC PROPERTIES OF Zr-DOPED Bi3.15ND0.85Ti3O12 THIN FILM DEPOSITED BY A SOL-GEL METHOD

Influence of the annealing temperature of the Bi4Ti3O12 seeding layer on the structural and electrical properties of Bi3.15Nd0.85Ti2.99Mn0.01O12 thin films

Stress and Its Related Effects on the Fatigue Behavior of Bi3.25la0.75ti3o12 Thin Films