Novel route to scalable synthesis of II–VI semiconductor nanowires: Catalyst-assisted vacuum thermal evaporation
Linyu Yang,W.J. Wang,B. Song,R. Wu,J. Li,Y.F. Sun,F. Shang,X.L. Chen,J.K. Jian
DOI: https://doi.org/10.1016/j.jcrysgro.2010.06.032
IF: 1.8
2010-01-01
Journal of Crystal Growth
Abstract:Vacuum thermal evaporation, a conventional film fabricating technique, has been explored to synthesize II–VI semiconductor nanowires based on a catalyst-assisted vapor–liquid–solid (VLS) process. Low melting-point metals, such as bismuth and tin, can be used as catalysts by co-evaporating with desired semiconductor materials. As proof of the concept, CdTe, CdS, ZnSe and ZnS single crystalline nanowires have been successfully synthesized on a large scale by this method. The growth mechanism involved in the method has been discussed. Morphological, structural and optical properties of as-synthesized nanowires were characterized, revealing the high quality of the nanowires. The results indicate that the method presented here is a novel and general route to mass production of II–VI semiconductor nanowires, which can be possibly scaled up for industrial application at low cost, and extended to other material systems.