Abstract:SiO2 is one of the most widely used dielectric materials in optical and electronic devices. The Josephson voltage standard (JVS) chip fabrication process has rigorous requirements for the deposition temperature and step-coverage profiles of the SiO2 insulation layer. In this study, we deposited high-quality SiO2 insulation films at 60 °C using inductively coupled plasma-chemical vapor deposition (ICP-CVD) to fulfill these requirements and fabricate JVS chips simultaneously. SiO2 films have a high density, low compressive stress, and a sloped sidewall profile over the vertical junction steps. The sidewall profiles over the vertical junction steps can be adjusted by changing the radio frequency (RF) power, ICP power, and chamber pressure. The effects of sputtering etch and sloped step coverage were enhanced when the RF power was increased. The anisotropy ratio of the deposition rate between the sidewall and the bottom of the film was lower, and the sloped step coverage effect was enhanced when the ICP power was increased, or the deposition pressure was decreased. The effects of the RF power on the stress, density, roughness, and breakdown voltage of the SiO2 films were also investigated. Despite increased compressive stress with increasing RF power, the film stress was still low and within acceptable limits in the device. The films deposited under optimized conditions exhibited improved densities in the Fourier transform infrared spectra, buffered oxide etch rate, and breakdown voltage measurements compared with the films deposited without RF power. The roughness of the film also decreased. The step-coverage profile of the insulation layer prepared under optimized conditions was enhanced in the junction and bottom electrode regions; additionally, the performance of the device was optimized. This study holds immense significance for increasing the number of junctions in future devices.

Research of Deposition SiO_2 Process Based on TEOS-O_2-N_2

Subatmospheric chemical vapor deposition ozone/TEOS process for SiO2 trench filling

Non-equilibrium,Atmospheric-pressure Plasma Jet for Depositing Silicon Oxide Films

Silicon Dioxide Deposition by Atmospheric Pressure and Low‐Temperature CVD Using TEOS and Ozone

Effect of the Monomer TEOS Flow Rate on the Formation of Silicon Dioxide Films by Nonequilibrium,atmospheric Pressure Plasma Jet

Advances in Research on Deposition Techniques for ZnO Thin Films

Microstructure and oxidation behavior of SiOC coatings on C/C composites co-deposited with HMDS and TEOS by using CVD process

Deposition of Dense SiO2 Thin Films for Electrical Insulation Applications by Microwave ECR Plasma Source Enhanced RF Reactive Magnetron Sputtering

Pre-deposition Growth of Interfacial SiO2 Layer by Low-Oxygen-partial-pressure Oxidation in the Al2O3/4H-SiC MOS Structure

Floating Low-Temperature Radio-Frequency Plasma Oxidation of Polycrystalline Silicon-Germanium

Modelling and Optimization for Deposition of SiO X N Y Films by Radio-Frequency Reactive Sputtering

The Power Source Effect on SiOx Coating Deposition by Plasma Enhanced Chemical Vapor Deposition

Simulation and Experimental Verification of Silicon Dioxide Deposition by PECVD

The role of O2 in CdSeTe thin film deposition and CdSeTe/CdTe solar cell performance

Deposition of SiOxNy films as gate insulator via r.f. reactive sputtering

Simulation studies on PECVD SiO2 process aiming at TSV application

Uniform broad-area deposition and patterning of SiO2 nanofilms by 172 nm photochemical conversion of liquid tetraethoxysilane layers at 300 K

Systematic Study of the SiOx Film with Different Stoichiometry by Plasma-Enhanced Atomic Layer Deposition and Its Application in SiOx/SiO2 Super-Lattice

Low-Temperature Deposition of High-Quality SiO2 Films with a Sloped Sidewall Profile for Vertical Step Coverage

Two-Step Deposition of Silicon Oxide Films Using the Gas Phase Generation of Nanoparticles in the Chemical Vapor Deposition Process

Interaction Of Tetraethoxysilane With Oh-Terminated Sio2 (001) Surface: A First Principles Study