Abstract:We present a systematic and comparative study of the structural and electronic properties of Cu-based ternary and quaternary semiconductors using first-principles electronic structure approaches. The important role that Cu d electrons play in determining their properties is illustrated by comparing results calculated with different exchange correlation energy functionals. We show that systematic improvement of the calculated anion displacement can be achieved by using the Heyd-Scuseria-Ernzerhof (HSE06) functional compared with the Perdew-Burke-Ernzerhof (PBE) functional. Quasiparticle band structures are then calculated within the G0W0 approximation using the crystal structures optimized within the HSE06 functional and starting from the PBE+U mean-field solution. Both the calculated quasiparticle band gaps and their systematic variation with chemical constituents agree very well with experiments. We also predict that the quasiparticle band gaps of the prototypical semiconductor Cu2ZnSnS4 in the kesterite (KS) phase is 1.65 eV and that of the stannite (ST) phase is 1.40 eV. These results are also consistent with available experimental values which vary from 1.45 to 1.6 eV.

Electronic and Optical Properties of Cuinse2 from Ab-Initio Calculations

Electronic structure, linear, nonlinear optical susceptibilities and birefringence of CuInX2 (X = S, Se, Te) chalcopyrite-structure compounds

Structural, electronic and optical calculations of Cu(In,Ga)Se2 ternary chalcopyrites

Research on CuInS2 Thin Films Prepared by One-step Electrodeposition

Optical Properties of LK-99 and Cu2S

Fabrication and Characterization of Copper–indium–diselenide (cuinse2, CIS) Thin Film Using One-Step Electro-Deposition Process

Electronic and Optical Properties of Orthorhombic LiInS2 and LiInSe2: A Density Functional Theory Investigation

Ab Initio Study of the Linear and Nonlinear Optical Properties of Hexagonal Cdse

First-principles studies on the electronic and optical properties of CuAlSe 2 and CuAl 5Se 8

Synthesis and Physical Properties of Solar Material Cu1+Xin1-Xse2

Comparative Study of Structural and Electronic Properties of Cu-based Multinary Semiconductors

First-principles study the effect of anion position on physical properties of CuGaSe2

Electronic structures and optical properties of CuSCN with Cu vacancies

Numerical Study of the Electronic Structure, Elastic and Optical Properties of Defect Quaternary Semiconductor CuGaSnSe4

Crystal And Electronic Band Structure Of Cu2znsnx4 (X=S And Se) Photovoltaic Absorbers: First-Principles Insights

Ab Initio Calculations of Structural, Electronic, and Optical Properties of Cu2HgSnSe4

Optical Applications of CuInSe 2 Colloidal Quantum Dots

Structural Diversity And Electronic Properties Of Cu2snx3 (X = S, Se): A First-Principles Investigation

Ternary Semiconductor Compounds CuInS2 (CIS) Thin Films Synthesized by Electrochemical Atomic Layer Deposition (EC-ALD)

Characterization of Phase, Structure, and Photoelectric Properties of CISSe Film and CISSe/CdS Heterojunctions

Selenization Temperature and Properties of CuInSe2 Films