Single Crystal Horizontal Bridgman Method

HAN Jiecai,LI Changqing,ZHANG Mingfu,ZUO Hongbo,MENG Songhe,YAO Tai

DOI: https://doi.org/10.3321/j.issn:1005-023X.2006.07.003

2006-01-01

Abstract:Horizontal Bridgman method is the main method of manufacturing single crystal of low dislocation,and its advantages and disadvantages are reviewed.Its characteristics,temperature distribution and numerical simulation are also reported.

What problem does this paper attempt to address?

Atomic-Precision Fabrication of Quasi-Full-Space Grain Boundaries in Two-Dimensional Hexagonal Boron Nitride.

Xibiao Ren,Xiaowei Wang,Chuanhong Jin

DOI: https://doi.org/10.1021/acs.nanolett.9b03114

IF: 10.8

2019-01-01

Nano Letters

Abstract:Precise control and in-depth understanding of the interfaces are crucial for the functionality-oriented material design with desired properties. Herein, via modifying the long-standing bicrystal strategy, we proposed a novel nanowelding approach to build up interfaces between two-dimensional (2D) materials with atomic precision. This method enabled us, for the first time, to experimentally achieve the quasi-full-parameter-space grain boundaries (GBs) in 2D hexagonal boron nitride (h-BN). It further helps us unravel the long-term controversy and confusion on the registry of GBs in h-BN, including (i) discriminate the relative contribution of the strain and chemical energy on the registry of GBs; (ii) identify a new dislocation core-Frank partial dislocation and four new antiphase boundaries; and (iii) confirm the universal GB faceting. Our work provides a new paradigm to the exploitation of structural-property correlation of interfaces in 2D materials.
(Invited) Defects in Cast-Mono Crystalline Silicon

Deren Yang

DOI: https://doi.org/10.1149/ma2021-01341090mtgabs

2021-01-01

ECS Meeting Abstracts

Abstract:Crystalline silicon, including Czochralski silicon (Cz-Si) and multicrystalline silicon (mc-Si),is main material for photovoltaic (PV) industry. How to produce more productive and less expensive crystalline silicon materials is still a big challenge. As we know, the seed-assisted growth method can be used to fabricate cast-mono (CM-Si) silicon by directional solidification, which should combine the both advantages of Cz-Si and mc-Si. However, there remain some problems to be resolved in growing CM-Si silicon ingots, particularly the control of dislocations which are the major and most detrimental defects in CM-Si. They can act as precipitation sites for impurities and thus reduce the carrier lifetime in ingots. Unlike mc-Si ingots, once dislocations are generated in the bottom of CM-Si ingots, they will glide and propagate along the growth direction without hindrance due to the lack of grain boundaries. In this presentation, we review our recent work of how to control defects, specially dislocations, in CM-Si. We induce a grain boundary by adjusting the orientation of seeds which can suppress the generation of dislocations originated from the junction of seeds. We have investigated the effect of Σ5, Σ13a grain boundary relationship at seed junctions of <100>-oriented CM-Si on dislocations and solar cell performance. We also use <110>-oriented seeds to grow new orientation CM-Si ingots to control the generation and propagation of dislocations. The results show that by designing the orientation of seeds, the dislocation density can be decreased and the solar cell efficiency can be improved obviously.
Numerical analysis of Cd1−xZnxTe crystal growth by the vertical Bridgman method using the accelerated crucible rotation technique

Liu Xiaohua,Jie Wanqi,Zhou Yaohe

DOI: https://doi.org/10.1016/S0022-0248(00)00601-1

IF: 1.8

2000-01-01

Journal of Crystal Growth

Abstract:The growth process of CdZnTe crystals by the vertical Bridgman method (VBM) using the accelerated crucible rotation technique (ACRT) has been numerically analyzed by the finite-difference method. The forced convection resulting from ACRT and its effects on the position and the shape of the melt/crystal interface are studied, and the solute redistribution and radial segregation are evaluated. The results show that during the ACRT process the convection vortex in the melt appears, develops, declines and disappears periodically according to the periodic change of the crucible rotations. Corresponding to the periodic change of the flow field, the growth rate, the temperature and concentration oscillate periodically. When ACRT with a certain crucible rotation type is applied to the Bridgman crystal growth process of CdZnTe, the interface depth increases markedly. “The discontinuous triangle wave” type which has the rotational reversal and includes the accelerated, decelerated and rest period is a proper one. For a CdZnTe crystal with a radius of 0.75cm, the period (TACRT) of 24s and the maximum rotation rate (ωmax) between 30 and 50rpm are preferable.
Orientation Control for Nickel-Based Single Crystal Superalloys: Grain Selection Method Assisted by Directional Columnar Grains

Songsong Hu,Yunsong Zhao,Weimin Bai,Yilong Dai,Zhenyu Yang,Fucheng Yin,Xinming Wang

DOI: https://doi.org/10.3390/ma15134463

IF: 3.4

2022-06-25

Materials

Abstract:The service performance of single crystal blades depends on the crystal orientation. A grain selection method assisted by directional columnar grains is studied to control the crystal orientation of Ni-based single crystal superalloys. The samples were produced by the Bridgman technique at withdrawal rates of 100 μm/s. During directional solidification, the directional columnar grains are partially melted, and a number of stray grains are formed in the transition zone just above the melt-back interface. The grain selected by this method was one that grew epitaxially along the un-melted directional columnar grains. Finally, the mechanism of selection grain and application prospect of this grain selection method assisted by directional columnar grains is discussed.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
Arrangement and Decomposition of Grain Boundary Dislocations: Two-Mode Phase-Field Crystal Simulation

Huanqing Li,Xiaona Wang,Haibin Zhang,Xiaolin Tian,Hua Hou,Yuhong Zhao

DOI: https://doi.org/10.3389/fmats.2022.875519

2022-01-01

Frontiers in Materials

Abstract:The grain-boundary dislocation arrangement and decomposition during constant-volume deformation of a nanoscale bi-crystal system in fcc-structured materials were studied by using the two-mode phase-field crystal (2PFC) method. The effects of different grain boundary misorientations (GBMs) and tensile deformation directions on the dislocation arrangement and decomposition are analyzed. In three different symmetrical tilt grain boundaries evaluated by PFC, the atomic density profile of grain boundaries changed periodically at equilibrium. The initial grain boundary dislocation arrangement of the three samples is almost the same when tensile deformation is applied to the samples in the x- or y- direction, and all are symmetrically arranged in a “bowknot ”structure. The stress at the grain boundary is concentrated with the increase of strain, and dislocation decomposition can effectively reduce the stress concentration. The time steps of dislocation decomposition at grain boundaries decreases with increasing strain rate. This work facilitates the application of PFC in the analysis of grain-boundary mechanics in an extended range of materials.
Phase Field Crystal Study of Grain Boundary Structure and Annihilation Mechanism in Low-Angle Grain Boundary

Huijun Guo,Yuhong Zhao,Yuanyang Sun,Jinzhong Tian,Hua Hou,Kewu Qi,Xiaolin Tian

DOI: https://doi.org/10.1016/j.spmi.2019.03.020

IF: 3.22

2019-01-01

Superlattices and Microstructures

Abstract:Using the advantage of phase field crystal model in microstructure evolution, we simulated the details of two-dimensional triangular phase on atomic scale and diffusion time scale. The results show that the annihilation process of grain boundaries can be divided into three stages. The energy changes of the system at different stages are accurately calculated and the process is quantitatively analyzed. By comparing the atomic density distributions at different temperatures and orientation angles, it is shown that the grain boundary is sensitive to temperature. Within the range of low-angle, the increase of orientation angle inhibits the occurrence of annihilation and decreases the grain boundary migration rate. Under the applied stress, the orientation angle has a certain response relationship with the yield strength of the material. This work has some practical significance in the influence of microstructure on the mechanical properties of materials.
Vertical Bridgman seeded growth of Cd1-xZnxTe crystals

Qingrun Hou,Ji an Chen,Lemin Zhao,Xinmin Zhang

IF: 6.318

1994-01-01

Rare Metals

Abstract:The method of vertical Bridgman seeded growth of Cd1-xZnxTe clrystals was studied. This method is promising in obtaining large size single crystals and improving the crystals structure. However, some problems such as seeded growth failure exist at present. (111)-oriented Cd0.96Zn0.04Te single crystal substrates with a size greater than 15��15 mm2 are obtained. The FWHM ranges from 18 to 66 arc.sec and the resistivity is greater than 106 ohm.cm.
A method to increase the homogeneous section of monocrystals

Li Qingchun,Xu Daming

DOI: https://doi.org/10.1016/0022-0248(87)90336-8

IF: 1.8

1987-01-01

Journal of Crystal Growth

Abstract:Increasing the growth rate with time can shorten the initial transient length along a crystal solidified in a Bridgman furnace. Likewise, decreasing the rate can decrease the length of the final transient region. Design of an optimum rate program for practical monocrystal production in order to obtain the most economical processing is discussed.
Industrial growth and characterization of Si‐doped GaAs crystal by a novel multi‐crucible Bridgman method

Min Jin,Hui Shen,Shiji Fan,Qingbo He,Jiayue Xu

DOI: https://doi.org/10.1002/crat.201700052

2017-01-01

Crystal Research and Technology

Abstract:In this wok, a novel multi-crucible Bridgman method is developed to produce the O 2 inch Si-doped GaAs crystals. Five placements are designed in the furnace means five ingots could be produced at the same time. Twinning and high dislocation density are the main growth defects that often take place in the crystals. After the solid-liquid interface and crystal cooling rate are optimized, the Si-doped GaAs crystals with favorable single crystalline yield are successfully obtained. The average etching pits density (EPD) of optimized GaAs crystals is <1500/cm(2). Full width at half maximum (FWHM) are tested all less than 60 that indicates GaAs crystals have high crystalline quality. The carrier concentration near the bottom and tail parts of ingots is in range of (4.5-5.9)x10(17) /cm(3) and (1.2-2.1)x10(18) /cm(3) due to segregation of Si element in GaAs crystals. Accordingly, the mobility is decreased from 2128-2651 cm(2)/v.s to 1581-1854 cm(2)/v.s. The result proves such multi-crucible Bridgman method is a feasible way for industrial growth of Si-doped GaAs crystals for opto-electronic application.
Growth Of Different Crystals Using A Modified Bridgman System

Jiuan Wei,Lili Zheng,Hui Zhang

DOI: https://doi.org/10.1115/IMECE2007-41631

2008-01-01

Abstract:This paper studies the favorable growth conditions for the III-V and II-VI crystals such as InAs, InSb, GaSe, GaP, PbTe and CdTe by the Bridgman technique. Numerical simulations have been conducted to investigate the flow field, temperature distribution in relation to the solidification interface shape and growth conditions for various materials. It is concluded that the growth is strongly affected by melt convection; a strong convection may destroy the interface stability, resulting in failed growth. The Grashof and Prandtl numbers are identified as the key parameters affecting the growth interface stability. Based on these two parameters, a growth process map is developed to quantify the difficulty of growth for different materials by Bridgman technique. To accommodate the growth of large diameter crystal, a new growth system based on Bridgman configuration is proposed in which two hot-zone furnace is introduced and the feasibility of using this system to suppress the melt convection, subsequently generating favorable growth conditions has been confirmed from the numerical simulations.
Phase Field Crystal Simulation of the Effect of Temperature on Low-Angle Symmetric Tilt Grain Boundary Dislocation Motion

Qi Ke-Wu,Zhao Yu-Hong,Guo Hui-Jun,Tian Xiao-Lin,Hou Hua

DOI: https://doi.org/10.7498/aps.68.20190051

IF: 0.906

2019-01-01

Acta Physica Sinica

Abstract:For crystal materials, the grain boundary structure is complex, which is usually the place in which stress concentration and impurity accumulate. Grain boundary structure and movement have a great influence on the macroscopic properties of crystal materials, therefore, it is of great significance to study the microstructure of grain boundary. With the phase filed crystal approach, the structure of low-angle symmetric tilt grain boundary and dislocation motion at nanoscale are studied. The low-angle symmetric tilt grain boundary structure can be described by a dislocation model, in which the grain boundary can be regarded as consisting of a series of edge dislocations at a certain distance. For a relaxation process and applied stress process, the position change of dislocation motion at grain boundaries and the change of free energy density of the system are observed. Furthermore, we also analyze the influence of temperature on the grain boundary structure and the dislocation motion. In the relaxation process, the free energy of the crystal system is higher under high temperature conditions. The results show that the motion of dislocation pairs in the grains can consume the internal energy and release the distortion energy stored at the grain boundary, and thus making the system more stable and the energy reach the lowest value earlier. Simulation results show that the lower the temperature of the system, the faster the free energy density decreases, the faster the regular arrangement rate of atoms increases, the shorter the time required for the free energy density to reach a stable state becomes. And when the grain boundary reaches a steady state, the arrangement of the dislocations becomes more and more regular and arranges in a straight line. For an applied stress process, with the decrease of temperature, the time required for the first encounter of dislocation pairs and the time required for the formation of single crystal become longer, and it takes more time for the first encounter of dislocation pairs in crystals to disappear completely. Further studies also show that with the decrease of temperature, the free energy density exhibits a multi-stage ascending and descending process. The rising process of energy curve corresponds to the stage of dislocation climbing along the grain boundary, and the decline process corresponds to the stage of dislocation decomposition and encounter annihilation. At the same time, the dislocation pairs' reaction becomes more complex. Finally, the dislocations annihilate with each other.
Suppression of Melt Convection in a Proposed Bridgman Crystal Growth System

J. A. Wei,L. L. Zheng,H. Zhang

DOI: https://doi.org/10.1016/j.ijheatmasstransfer.2009.02.029

2009-01-01

Abstract:Numerical simulations are performed for Bridgman crystal growth of several semiconductor materials, such as InAs, InSb, GaSe, CdTe, PbTe, and GaP. For materials with low Prandtl and low Grashof numbers, melt convection is weak and the traditional Bridgman technique is a suitable growth process. For the materials with high Prandtl numbers in their melt status and the growth system with high Grashof number, the temperature field and the growth interface are significantly influenced by melt flow, resulting in the complicated flow pattern and curved interface shape. A new Bridgman crystal growth system is proposed to suppress convection and improve solidification interface shape by cooling of the top melt. The results obtained from the proposed design demonstrate that melt convection may be controlled by adjusting the design parameters. Further, parametric studies are performed to determine the influence of the control parameters on melt flow and solidification interface.
Thermal Field Simulation and Optimization of PbF2 Single Crystal Growth by the Bridgman Method

Lin Li,Peixiong Zhang,Zhen Li,Zhenqiang Chen

DOI: https://doi.org/10.3390/cryst14050473

IF: 2.7

2024-05-18

Crystals

Abstract:PbF2 single crystals are usually grown in the temperature gradient region by the Bridgman–Stockbarger method. Temperature distribution during the growth process is particularly important for the preparation of high-quality crystals. In this study, the temperature field during the growth of the PbF2 single crystals was simulated based on the finite element method. The temperature distribution and temperature gradient changes in the crucible were investigated at different growth stages, including the seeding, shouldering, and iso-diameters stages. The calculated results show that as the crucible position continues downward during the growth process, the axial temperature gradient increases and then decreases from the bottom to the top of the crucible, with almost flat isotherms near the solid–liquid interface where the axial temperature gradient is larger. At the shoulder below the crucible, the solid–liquid interface was improved by adjusting the tilt angle. Furthermore, based on a novel design of the heat-insulating baffle, the concave solid–liquid interface in the iso-diameter stage can be effectively adjusted to realize a lower radial temperature gradient. This study provides theoretical guidance for the optimization of the growth of high-quality PbF2 crystals by the Bridgman method.

materials science, multidisciplinary,crystallography
Advances of interface, flow, and stress control for VB crystal growth: An overview

Yufeng Shi,Pengfei Wang,Honghe Mu,Huamin Kou,Anhua Wu,Liangbi Su

DOI: https://doi.org/10.1016/j.pcrysgrow.2023.100605

IF: 4.077

2023-11-11

Progress in Crystal Growth and Characterization of Materials

Abstract:The Vertical Bridgman (VB) method plays a vital role in growing crystals of Group II-VI semiconductors, oxides, and fluorides. However, achieving large-scale crystals with high quality remains challenging due to the complexities of heat-mass transfer and phase change phenomena involved in the process. To enhance the understanding and control of the VB crystal growth, this paper reviews previous numerical simulation studies on optimizing and controlling the melt-crystal interface, flow, and stress during the growth process, as these factors strongly influence the generation and distribution of defects. The shape of the melt-crystal interface significantly impacts the propagation of grains and inclusions, and a desirable interface can be achieved by enhancing axial heat flux or suppressing radial heat dissipation at the interface. Effective control of melt flow ensures uniform solute distribution, and strategies like suppressing natural convection or introducing forced convection techniques are prove beneficial. Stress plays a pivotal role in dislocation movement and interaction, potentially leading to low angle grain boundaries and cracks. Stress control methods focus on minimizing deformation sources, including temperature, concentration, and mechanical contact. The paper provides detailed explanations of interface, flow, and stress control methods, offering valuable insights for researchers aiming to grow large-scale, high-quality crystals with enhanced efficiency. Furthermore, the control mechanisms and methods discussed in this review may also be applicable to other melt crystal growth techniques.

materials science, characterization & testing,crystallography
A Modified Vertical Bridgman Method for Growth of High-Quality Cd1−xZnxTe Crystals

Guoqiang Li,Xiaolu Zhang,Hui Hua,Wanqi Jie

DOI: https://doi.org/10.1007/s11664-005-0266-3

IF: 2.1

2005-01-01

Journal of Electronic Materials

Abstract:In order to deal with the phenomena of Cd evaporation from the raw materials and the heterogeneity caused by the larger-than-unity segregation coefficient of Zn in CdTe during the conventional vertical Bridgman method (VBM) growth of Cd1-xZnxTe (CZT), two modifications—Cd compensation and accelerated crucible rotation technique (ACRT)—are simultaneously adopted to the VBM. By a combination of VBM with the two modifications, several CZT ingots with the dimensions of ∼60×150 mm2 are grown. Structural, optical, and electrical characterization of the as-grown CZT crystals reveals that the application of Cd compensation and ACRT is of obvious efficiency in improving concentration homogeneity, reducing defect density, raising crystal quality and, therefore, upgrading the optoelectronic properties of CZT crystals. Nuclear spectra measurements of detectors fabricated from the as-grown crystals also indicate that both modifications can upgrade the detecting performance of CZT.
Research Progress in Crystal Orientation of Single Crystal Superalloys

ZHAO Xinbao,LIU Lin,ZHANG Weiguo,XU Yiku,FU Hengzhi

DOI: https://doi.org/10.3321/j.issn:1005-023x.2007.10.017

2007-01-01

Abstract:The deviation of preferred orientation of single crystal superalloys from the axis is one of the most important defects.In this paper,the conversion rule of preferred orientation during the process of the crystal growth is introduced briefly,and the same time,the effects of the orientation on the dendritic morphology and scale are studied. The competitive principles of grains with different crystal orientations are also analyzed,and the suggestions are point- ed out for further consideration.The influence factors for the preferred orientation are summaried,such as the growth methods,temperature gradient,the shape of the interface,melt and so on.
Influence of the Size Effect on the Microstructures of the DWDS- and Bridgman-Solidified Single-Crystal CMSX-4 Superalloy

Fu Wang,Dexin Ma,Yiran Mao,Samuel Bogner,Andreas Bührig-Polaczek

DOI: https://doi.org/10.1007/s11663-015-0461-4

2015-01-01

Abstract:To evaluate the potential benefits of utilizing the downward directional solidification process (DWDS) for controlling the homogeneity of microstructures, single-crystal CMSX-4 superalloy bars having different sizes of cross sections have been directionally solidified at a withdrawal rate of 1 mm/min using the DWDS and Bridgman processes. By varying the sizes of the cross sections, the DWDS process demonstrated higher thermal gradients, with smaller microstructural variations. The higher and more uniform thermal gradients not only refined the microstructures but also improved the microstructural homogeneity. In contrast to this, the Bridgman cast bars exhibited large-sized pores and a high volume of microporosity regardless of the cross-sectional size.
Comparative Study of the Segregation Behavior and Crystallographic Orientation in a Nickel-Based Single-Crystal Superalloy

Fu Wang,Dexin Ma,Samuel Bogner,Andreas Buehrig-Polaczek

DOI: https://doi.org/10.1016/j.jallcom.2015.04.237

IF: 6.2

2015-01-01

Journal of Alloys and Compounds

Abstract:The segregation behavior and crystallographic orientation of a nickel-based single-crystal CMSX-6 superalloy produced by the downward directional solidification process have been investigated. The results were compared with those in the Bridgman process. In comparison to the Bridgman process, the fluctuations in the concentrations of Al, Ti, Ta, Co, Mo and Cr became smaller along the path from the dendrite lobe through the interdendritic region to the adjacent dendrite lobe. This suggests that the degree of the segregation of these alloying elements was reduced by using the DWDS process. In addition to this, the angle between the dendrites' preferred growth direction and the heat flow direction in the DWDS cast samples, and the splaying region were smaller than those in the Bridgman solidified samples. This indicates that better crystal orientation can be obtained in nickel-based single-crystal superalloy components by using the downward directional solidification process.
Temperature dynamic compensation vertical Bridgman method growth of high-quality GaSb single crystals

Bing Yan,Weihua Liu,Zhijie Yu,Wenhui Yuan,Chang Yu,Xiaoxing Zhang,Li Huang

DOI: https://doi.org/10.1016/j.jcrysgro.2022.126988

IF: 1.8

2023-01-01

Journal of Crystal Growth

Abstract:Gallium antimonide (GaSb) is considered an ideal substrate for heterostructure growth. A significant property that inhibits the widespread application of infrared plane-array detector growth on GaSb is the crystal quality of the starting substrate. Herein, we report the growth of single-crystal GaSb by a temperature dynamic compensation vertical Bridgman (TDC-VB) method. This approach offers a low temperature gradient and a stable solid–liquid interface position in the furnace during the growth process. Two inch diameter twin-free GaSb single crystals with (100) orientation have been reproducibly obtained using the TDC-VB method. The crystalline character of the obtained GaSb has been examined by optical microscopy (OM), high-resolution X-ray diffraction (HRXRD), X-ray tomography (XRT), and Fourier-transform infrared (FTIR) spectroscopy. The etch pit dislocation density (EPD) of the GaSb polished wafers (100) was 6–72 cm−2, and the full-width at half-maximum (FWHM) of the Bragg diffraction peak was 15.4″. A uniform XRT image was obtained, and ca. 50 % of the GaSb wafers, which were produced by one crystal, showed transmittance > 20 % at 10 µm, indicating the formation of high-quality GaSb crystals. This work provides useful guidelines for the formation of high-quality GaSb crystals with significant promise for substrate applications.

materials science, multidisciplinary,physics, applied,crystallography
Numerical Analysis of the Dislocation Density in Multicrystalline Silicon for Solar Cells by the Vertical Bridgman Process

Makoto Inoue,Satoshi Nakano,Hirofumi Harada,Yoshiji Miyamura,Bing Gao,Yoshihiro Kangawa,Koichi Kakimoto

DOI: https://doi.org/10.1155/2013/706923

2013-01-01

International Journal of Photoenergy

Abstract:We studied the effects of cooling process on the generation of dislocations in multicrystalline silicon grown by the vertical Bridgman process. From the temperature field obtained by a global model, the stress relaxation and multiplication of dislocations were calculated using the Haasen-Alexander-Sumino model. It was found that the multiplication of dislocations is higher in fast cooling processes. It was confirmed that residual stress is low at high temperatures because the movement of the dislocations relaxes the thermal strain, while the residual stress increases with decreasing temperature, because of reduced motion of dislocations and formation of a strain field at lower temperatures.

energy & fuels,chemistry, physical,optics,physics, atomic, molecular & chemical

Single Crystal Horizontal Bridgman Method

Atomic-Precision Fabrication of Quasi-Full-Space Grain Boundaries in Two-Dimensional Hexagonal Boron Nitride.

(Invited) Defects in Cast-Mono Crystalline Silicon

Numerical analysis of Cd1−xZnxTe crystal growth by the vertical Bridgman method using the accelerated crucible rotation technique

Orientation Control for Nickel-Based Single Crystal Superalloys: Grain Selection Method Assisted by Directional Columnar Grains

Arrangement and Decomposition of Grain Boundary Dislocations: Two-Mode Phase-Field Crystal Simulation

Phase Field Crystal Study of Grain Boundary Structure and Annihilation Mechanism in Low-Angle Grain Boundary

Vertical Bridgman seeded growth of Cd1-xZnxTe crystals

A method to increase the homogeneous section of monocrystals

Industrial growth and characterization of Si‐doped GaAs crystal by a novel multi‐crucible Bridgman method

Growth Of Different Crystals Using A Modified Bridgman System

Phase Field Crystal Simulation of the Effect of Temperature on Low-Angle Symmetric Tilt Grain Boundary Dislocation Motion

Suppression of Melt Convection in a Proposed Bridgman Crystal Growth System

Thermal Field Simulation and Optimization of PbF2 Single Crystal Growth by the Bridgman Method

Advances of interface, flow, and stress control for VB crystal growth: An overview

A Modified Vertical Bridgman Method for Growth of High-Quality Cd1−xZnxTe Crystals

Research Progress in Crystal Orientation of Single Crystal Superalloys

Influence of the Size Effect on the Microstructures of the DWDS- and Bridgman-Solidified Single-Crystal CMSX-4 Superalloy

Comparative Study of the Segregation Behavior and Crystallographic Orientation in a Nickel-Based Single-Crystal Superalloy

Temperature dynamic compensation vertical Bridgman method growth of high-quality GaSb single crystals

Numerical Analysis of the Dislocation Density in Multicrystalline Silicon for Solar Cells by the Vertical Bridgman Process