Intense red-emitting phosphors for LED solid-state lighting
Xiao-xiao Wang,Jing Wang,Jian-xin Shi,Qiang Su,Meng-lian Gong
DOI: https://doi.org/10.1016/j.materresbull.2006.11.029
IF: 5.6
2007-01-01
Materials Research Bulletin
Abstract:The phosphors Gd2−xEux(MoO4)3 (x=0.20, 0.40, 0.60, 0.80, 1.0, 1.2, 1.4, 1.6, 1.8, 2.0), Gd0.8−xYxEu1.2(MoO4)3 (x=0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8) and Gd0.2Y0.6−xEu1.2Smx(MoO4)3 (x=0.02, 0.024, 0.028, 0.032, 0.036, 0.04) were prepared by solid-state reaction technique at 950°C. The presence of the Y3+ and Sm3+ ions strengthen and broaden the absorption of the phosphors at ∼400nm. The intense red-emitting phosphor Gd0.2Y0.572Eu1.2Sm0.028(MoO4)3 with orthorhombic structure was obtained. Both Eu3+ and Sm3+ f–f transition absorptions are observed in the excitation spectra, the main emission line is at 616nm (5D0→7F2 transition of Eu3+) and the chromaticity coordinates (x=0.66, y=0.33) is very close to the NTSC standard values (x=0.67, y=0.33). It is considered to be an efficient red-emitting phosphor for GaN-based light emitting diode (LED).