An efficient rare-earth free deep red-emitting GdGeSbO6:Mn4+ phosphor for white light-emitting diodes

Yujia Liu,Zhongfa Li,Wenjun Zhang,Xinyue Yan,Peng Guo,Jiayi Yan
DOI: https://doi.org/10.1039/d4dt01434k
IF: 4
2024-06-20
Dalton Transactions
Abstract:Red phosphors play an important role in improving the light quality and color rendering index of white light-emitting diodes (WLEDs) for lighting. In this paper, we report the transition ions Mn4+-activated deep red phosphor GdGeSbO6: x% Mn4+ and analyze its crystal structure, composition and luminescence behavior in detail. Its optimal doping concentration of Mn4+ is 0.3%. Under ultraviolet (UV) excitation, GdGeSbO6: 0.3% Mn4+ produces a narrow emission peak centered at 682 nm in the range of 650-800 nm with full width at half maximum (FWHM) of 25 nm, which is attributed to the spin-prohibited 2Eg→4A2g transition of Mn4+ ions. Notably, the optimal phosphor GdGeSbO6: 0.3% Mn4+ has a high internal quantum efficiency (IQE ≈ 65%) and excellent thermal stability performance (I423 K/I303 K ≈ 62%). The synthesis of high-performance warm WLEDs and full-spectrum WLEDs was achieved by combining and coating GdGeSbO6: 0.3% Mn4+ phosphors with commercial phosphors on the surface of a 365 nm UV chip.
chemistry, inorganic & nuclear
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