Effect of Deep-Level States on Electroluminescence and I-V Characteristics of White Light-Emitting Diodes

Meng Qingfang,Chen Peng,Guo Yuan,Yang Guofeng,Zhang Rong
DOI: https://doi.org/10.3969/j.issn.1003-353x.2011.10.004
2011-01-01
Abstract:In order to investigate the optical and electrical characteristics of one kind of phosphor-free white light-emitting diode(LED),the electroluminescence and I-V characteristics with increasing temperature of the white LED were measured,and a blue LED with the similar structure was measured for comparison.A wide long wavelength emission peak related to the deep-level states in the active region was observed in the white LED.According to the simulation of the emission intensity dependency of this peak with temperature,the average activation energy of deep-level states was obtained,which is about 199 meV.Deep-level states in the active region also influenced the I-V characteristics of the white LED.Deep-level states in the active region became extra source of carriers and contribute to the unique I-V characteristics of the white LED.
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