Abstract:The crystallization of amorphous complex oxide layers from isolated seed crystals presents an opportunity to remove geometric constraints posed by thin-film epitaxial growth methods employing single-crystal substrates. The crystallization processes initiated by a distribution of isolated nanoscale seeds occur in a state of mechanical stress that is different from planar thin-film epitaxy. The effects of this stress were probed in the crystallization of the model perovskite oxide SrTiO3 nucleated by isolated nanoscale SrTiO3 seeds. Synchrotron nanobeam scattering and diffraction were used to probe the spatial distribution of crystalline and amorphous SrTiO3. Contributions to the diffraction patterns from these components were identified using non-negative matrix factorization. Individual SrTiO3 crystallites exhibit a lattice rotation resulting from the density difference between amorphous and crystalline SrTiO3. Stress at the crystal–amorphous interface advancing from the seeds produces a rotation of the crystal lattice at a rate of tens of degrees per micron of crystallization in the plane of the film. The rate of the lattice rotation provides insight into the crystallization mechanism. The lattice rotation indicates that nanoscale morphological control during solid-phase epitaxial crystallization from nanocrystal seeds can be achieved by manipulating the interface stress between the amorphous and crystalline phases to control dislocation dynamics.

A lateral growth mode leading to successive rotation of crystallographic orientation

Consecutive Rotation Of Crystallographic Orientation In Lateral Growth

Nucleation-Mediated Lateral Growth on Foreign Substrate

Liquid Phase Heteroepitaxial Growth on Convex Substrate Using Binary Phase Field Crystal Model

Nucleation-Mediated Lateral Growth Of Crystalline Islands On Foreign Substrate: An Origin Of Long-Range Ordering In Pattern Formation

A Binary Phase Field Crystal Study for Liquid Phase Heteroepitaxial Growth

Growth of Curved Crystals: Competition Between Topological Defect Nucleation and Boundary Branching.

Simulation of Morphological Evolution and Crystallographic Tilt in Heteroepitaxial Growth Using Phase-Field Crystal Method

A Low-Dimensional Crystal Growth Model on an Isotropic and Quasi-Free Sustained Substrate*

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A Theoretical Study On The Growth Of Low-Dimensional Nanocrystals On Isotropic Substrates

Novel Comprehensive Theoretical Description of Epitaxial Crystal-Growth Modes and the Prediction Of“post S-K Compatible-Heterogeneous-Growth Mode”

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Understanding homoepitaxial growth of horizontal kinked GaN nanowires

Orientation Modulated Epitaxy of Cu Nanorods on Si(1 0 0) Substrate

Step-edge-guided nucleation and growth mode transition of α-Ga 2 O 3 heteroepitaxy on vicinal sapphire

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Predicting nanocrystal morphology governed by interfacial strain

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