Solidification and crystal growth of binary Tb5Si3 intermetallics

Y. Xu,W. Löser,L. Liu,B. Büchner
DOI: https://doi.org/10.1016/j.jcrysgro.2011.01.106
IF: 1.8
2011-01-01
Journal of Crystal Growth
Abstract:Tb5Si3 single crystals were grown by a vertical floating zone method with radiation heating at a zone traveling rate of 3mm/h. The compound exhibits congruent melting behavior at a temperature of about 1785°C. The crystal is nearly stoichiometric as proved by chemical analysis and exhibits a hexagonal Mn5Si3-type structure with lattice parameters a=0.8469nm and c=0.6354nm. Platelet-like Tb5Si4 precipitates contained in the crystal matrix proved that the Tb5Si3 compound possesses a finite homogeneity range. The fraction of precipitates has been diminished by crystal growth with slightly Si depleted feed rod compositions. Single crystalline samples exhibit magnetic ordering below a temperature TN=69K and a magnetic easy axis [010] in the basis plane of the hexagonal unit cell.
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