Abstract:InAsSb epilayers with the thickness of 100 μm are grown by the melt epitaxy（ME）.The cutoff wavelengths of the materials enter the 8-12 μm range.The measurement results demonstrate that InAsSb epilayers have good single crystal orientation and crystalline quality,and the dislocation densities reach the order of 104 cm-2.Van der Pauw measurements show that the room temperature electron mobilities of InAsSb epilayers are higher than 5×104 cm2/Vs with carrier densities of 1～3×1016 cm-3.High-sensitivity room-temperature InAsSb detectors with a response wavelength range of 2-9 μm are fabricated based on this material.The detectors are immersion photoconductors.The Si optical lenses are set on the detectors,and the SiO or ZnS anti-reflective coatings are deposited on the lenses.The performance of InAsSb photoconductors is measured by a standard blackbody source with a temperature of 500 K and modulating frequency of 800 Hz under the bias current of 10 mA.At 293 K,the highest blackbody responsivity is 168 V/W,the blackbody detectivities reach（2-6）×108 cm·Hz1/2·W-1,and the peak detectivities are higher than 1×109 cm·Hz1/2·W-1.The performances of the detectors have already achieved the application level,indicating the potential applications for infrared systems and infrared imaging at room temperature.

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